Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Abdelhamid El Kaaouachi"'
Autor:
Christian Legrand, Jamal Hemine, Abdelhamid El Kaaouachi, Mimoun Ismaili, A. Daoudi, Redouane Douali
Publikováno v:
Liquid Crystals. 48:1231-1246
We present the effect of polymer network on the ferroelectric phase for a polymer stabilised ferroelectric liquid crystal (PSFLC) system. The ferroelectric liquid crystal (FLC) exhibits a very shor...
Publikováno v:
Exploratory Materials Science Research. 1:067-073
Publikováno v:
Molecular Crystals and Liquid Crystals. 710:90-102
We model the dielectric function of aluminum (Al). The modeling has been performed on Al in bulk and nanometric states. First, we will model the experimental measurements of the dielectric constant...
Autor:
Abdelhamid El Kaaouachi, Abdellatif El Oujdi, M. Errai, Asmaa Chakhmane, Hassan El Idrissi, Adil Echchelh
Publikováno v:
Journal of the Korean Physical Society. 75:389-393
In this work, we conducted an investigation concerning low-temperature electrical transport phenomena in a two-dimensional (2D) GaAs hole gas. The different carrier densities of the sample locate them on the insulating side of the metal-insulator tra
Autor:
Brahim Ait Hammou, Abdellatif El Oujdi, S. Dlimi, Adil Echchelh, Jamal Hemine, Abdelhamid El Kaaouachi, Chi-Te Liang
In this work, we model the dielectric functions of gold (Au) and silver (Ag) which are typically used in photonics and plasmonics. The modeling has been performed on Au and Ag in bulk and in nanometric states. The dielectric function is presented as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13239e6a28858ae7c7bdba05cbd03a66
http://www.intechopen.com/articles/show/title/modeling-the-bulk-and-nanometric-dielectric-functions-of-au-and-ag
http://www.intechopen.com/articles/show/title/modeling-the-bulk-and-nanometric-dielectric-functions-of-au-and-ag
Publikováno v:
Lithuanian Journal of Physics. 60
We have investigated the resistivity of a 2D hole system in GaAs in the temperature range 200 mK < T < 800 mK at zero magnetic field and low hole densities when the system is near the metal–insulator transition in the insulating side. We have found
Publikováno v:
Chinese Journal of Physics. 55:2283-2290
Experimental results on resistivity of the insulating samples 70Ge: Ga p-type at low temperatures has been analyzed in the insulating side of the Metal–Insulator Transition (MIT). The resistivity measurements were obtained in the temperature range
Publikováno v:
Superlattices and Microstructures. 74:242-246
In this paper, we have studied the magnetoresistance in a dilute two-dimensional hole gas in GaAs/AlGaAs within a parallel magnetic field. To do this, we tried to define the normalized resistivity, ρ(B)/ρ(0), as a function as B/Bχ and B/Bcross, wh
Publikováno v:
Journal of the Korean Physical Society. 64:424-428
We analyze the electrical resistivity and conductivity of a dilute two-dimensional electron gas (2DEG) in a Si metal-oxide-semiconductor field-effect transistor. When a magnetic field is applied parallel to the plane of the 2DEG, a signature of compl
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 54:181-184
In this work, we present a study of the temperature and carriers density dependence of the electrical transport of high mobility two dimensional hole system grown on the (311) surface of GaAs. At low temperatures, the analysis of the variation of con