Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Abdelaziz Lazzaz"'
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 35:619-634
This paper analyses the electrical characteristics of 10 nm tri-gate (TG) N- and P-channel silicon-on-insulator (SOI) FinFETs with hafnium oxide gate dielectric. The analysis has been performed through simulations by using Silvaco ATLAS TCAD with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd445b9167e077eecc39e59b6b7a7b5a
https://doi.org/10.2298/fuee2204619l
https://doi.org/10.2298/fuee2204619l
Semiconductor device dimensions have been downsized to nanoscale dimensions to upgrade the driving capacity and increasing speed. At the lower technology node, the performance of conventional CMOS circuits degrades because of the short channel effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54c7a9a34eab91c98485e67ad908a0d9
https://doi.org/10.21203/rs.3.rs-1734763/v1
https://doi.org/10.21203/rs.3.rs-1734763/v1
Publikováno v:
Micro and Nanostructures. 165:207210
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a3373af3112ac156ab968ec58693830
https://doi.org/10.1016/j.micrna.2022.207210
https://doi.org/10.1016/j.micrna.2022.207210