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In this paper, a new source-all-around tunnel field-effect transistor (SAA-TFET) is proposed and investigated by using TCAD simulation. The tunneling junction in the SAA-TFET is divided laterally and vertically with respect to the channel direction w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ee8be284b82677bd82ff500750c2563
https://doi.org/10.3762/bxiv.2019.40.v1
https://doi.org/10.3762/bxiv.2019.40.v1
Autor:
W. Fikry, Dalia Selim, Amr Kotb, Mina Azmy, Mostafa Fedawy, Ahmed Afifi, Hany Mahrous, Michael Gad, Abdallh AbouElainain
Publikováno v:
Semiconductor Science and Technology. 35:095017