Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Abdallah Sakri"'
Autor:
Abdallah Sakri, Clotilde Des Robert, N. Bertru, Christophe Levallois, Jean-Marc Jancu, Jithesh Kuyyalil, Mircea Modreanu, Antoine Létoublon, A. Le Corre, Laurent Pedesseau, Andrea Balocchi, Slimane Loualiche, Xavier Marie, Anne Ponchet, Olivier Durand, Nathalie Boudet, Laurent Lombez, Mathieu Perrin, Jacky Even, Charles Cornet, Samy Almosni, Thomas Quinci, T. Nguyen Thanh, Pierre Rale, Jean-François Guillemoles, S. Tricot, Pascal Turban
Publikováno v:
Proceedings of SPIE, the International Society for Optical Engineering
Proceedings of SPIE, the International Society for Optical Engineering, 2013, Quantum sensing and nanophotonic devices X, 8631, pp.863126. ⟨10.1117/12.2012670⟩
Proceedings of SPIE, the International Society for Optical Engineering, SPIE, The International Society for Optical Engineering, 2013, Quantum sensing and nanophotonic devices X, 8631, pp.863126. ⟨10.1117/12.2012670⟩
Proceedings of SPIE, the International Society for Optical Engineering, 2013, Quantum sensing and nanophotonic devices X, 8631, pp.863126. ⟨10.1117/12.2012670⟩
Proceedings of SPIE, the International Society for Optical Engineering, SPIE, The International Society for Optical Engineering, 2013, Quantum sensing and nanophotonic devices X, 8631, pp.863126. ⟨10.1117/12.2012670⟩
San Francisco, California, United States; International audience; Lattice-matched GaP-based nanostructures grown on silicon substrates is a highly rewarded route for coherent integration of photonics and high-efficiency photovoltaic devices onto sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ef1066dc4581dfc8c7f49560e76ff95
https://hal.science/hal-00842763/file/2013_SPIE8631_Durand_863126-1.PDF
https://hal.science/hal-00842763/file/2013_SPIE8631_Durand_863126-1.PDF
Autor:
Abdallah Sakri, Jean-Marc Jancu, Clotilde Des Robert, Jacky Even, Olivier Durand, Charles Cornet, Laurent Pedesseau
Publikováno v:
AIP Conference Proceedings
THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012
31st International Conference on the Physics of Semiconductors (ICPS 2012)
31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland. pp.464, ⟨10.1063/1.4848486⟩
THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012
31st International Conference on the Physics of Semiconductors (ICPS 2012)
31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland. pp.464, ⟨10.1063/1.4848486⟩
International audience; We study energy-band engineering with InAsN monolayer in GaAs/GaP quantum well structure. A tight-binding calculation indicates that both type I alignment along with direct band-gap behavior can be obtained. We show that the o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daf18f8a2a38f655cefd5d39d2f9f890
https://hal.archives-ouvertes.fr/hal-00726876
https://hal.archives-ouvertes.fr/hal-00726876
Autor:
Jean-Marc Jancu, M. Chaouach, M.A. Maaref, Abdallah Sakri, R. Samti, Jacky Even, Jean-Michel Gérard, Faical Raouafi
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2012, 101 (1), pp.012105. ⟨10.1063/1.4731783⟩
Applied Physics Letters, 2012, 101 (1), pp.012105. ⟨10.1063/1.4731783⟩
Applied Physics Letters, American Institute of Physics, 2012, 101 (1), pp.012105. ⟨10.1063/1.4731783⟩
Applied Physics Letters, 2012, 101 (1), pp.012105. ⟨10.1063/1.4731783⟩
International audience; Band structure calculations of complete InAs monolayer in AlGaAs/GaAs quantum wells are performed within the framework of the extended-basis sp3d5s* tight-binding model. We show that the optical properties can be tuned from th