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Autor:
Jain, SK, Syed, N, Balendhran, S, Abbas, SAT, Ako, RT, Low, MX, Lobo, C, Zavabeti, A, Murdoch, BJ, Gupta, G, Bhaskaran, M, Crozier, KB, Russo, SP, Daeneke, T, Walia, S
Gallium nitride (GaN) technology has matured and commercialised for optoelectronic devices in the ultraviolet (UV) spectrum over the last few decades. Simultaneously, atomically thin materials with unique features have emerged as contenders for devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______363::0eadcb0e1827ffb04496073f277511b7
https://hdl.handle.net/10453/170808
https://hdl.handle.net/10453/170808
