Zobrazeno 1 - 10
of 346
pro vyhledávání: '"Abbarchi M"'
Autor:
Ristori, A., Granchi, N., Intonti, F., Khoury, M., Hannani, D., Ruiz, C. M., Salvalaglio, M., Filippatos, A., Amato, M., Herzig, T., Meijer, J., Pezzagna, S., Bollani, M., Barri, C., Abbarchi, M., Biccari, F.
Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy, and
Externí odkaz:
http://arxiv.org/abs/2306.07049
Autor:
Lefaucher, B., Jager, J. -B., Calvo, V., Durand, A., Baron, Y., Cache, F., Jacques, V., Robert-Philip, I., Cassabois, G., Herzig, T., Meijer, J., Pezzagna, S., Khoury, M., Abbarchi, M., Dréau, A., Gérard, J. -M.
Publikováno v:
Appl. Phys. Lett. 122, 061109 (2023)
We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is studied usi
Externí odkaz:
http://arxiv.org/abs/2210.05485
Autor:
Durand, A., Baron, Y., Redjem, W., Herzig, T., Benali, A., Pezzagna, S., Meijer, J., Kuznetsov, A. Yu., Gérard, J. -M., Robert-Philip, I., Abbarchi, M., Jacques, V., Cassabois, G., Dréau, A.
Publikováno v:
Phys. Rev. Lett. 126, 083602 (2021)
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employe
Externí odkaz:
http://arxiv.org/abs/2010.11068
Autor:
Redjem, W., Durand, A., Herzig, T., Benali, A., Pezzagna, S., Meijer, J., Kuznetsov, A. Yu., Nguyen, H. S., Cueff, S., Gérard, J. -M., Robert-Philip, I., Gil, B., Caliste, D., Pochet, P., Abbarchi, M., Jacques, V., Dréau, A., Cassabois, G.
Publikováno v:
Nature Electronics 3, 738-743 (2020)
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a
Externí odkaz:
http://arxiv.org/abs/2001.02136
Autor:
Beaufils, C., Redjem, W., Rousseau, E., Jacques, V., Kuznetsov, A. Yu., Raynaud, C., Voisin, C., Benali, A., Herzig, T., Pezzagna, S., Meijer, J., Abbarchi, M., Cassabois, G.
Publikováno v:
Phys. Rev. B 97, 035303 (2018)
We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this point defect
Externí odkaz:
http://arxiv.org/abs/1708.05238
Autor:
Sala, V. G., Solnyshkov, D. D., Carusotto, I., Jacqmin, T., Lemaître, A., Terças, H., Nalitov, A., Abbarchi, M., Galopin, E., Sagnes, I., Bloch, J., Malpuech, G., Amo, A.
Publikováno v:
Phys. Rev. X 5, 011034 (2015)
One of the most fundamental properties of electromagnetism and special relativity is the coupling between the spin of an electron and its orbital motion. This is at the origin of the fine structure in atoms, the spin Hall effect in semiconductors, an
Externí odkaz:
http://arxiv.org/abs/1406.4816
Autor:
Abbarchi, M., Amo, A., Sala, V. G., Solnyshkov, D. D., Flayac, H., Ferrier, L., Sagnes, I., Galopin, E., Lemaitre, A., Malpuech, G., Bloch, J.
Publikováno v:
Nature Physics 9, 275 (2013)
A textbook example of quantum mechanical effects is the coupling of two states through a tunnel barrier. In the case of macroscopic quantum states subject to interactions, the tunnel coupling gives rise to Josephson phenomena including Rabi oscillati
Externí odkaz:
http://arxiv.org/abs/1212.5467
Autor:
Sallen, G., Urbaszek, B., Glazov, M. M., Ivchenko, E. L., Kuroda, T., Mano, T., Kunz, S., Abbarchi, M., Sakoda, K., Lagarde, D., Balocchi, A., Marie, X., Amand, T.
Publikováno v:
Physical Review Letters 107, 166604 (2011)
In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both charged and neu
Externí odkaz:
http://arxiv.org/abs/1106.6182
Autor:
Belhadj, Thomas, Amand, Thierry, Kunold, Alejandro, Simon, Claire-Marie, Kuroda, T., Abbarchi, M., Mano, T., Sakoda, K., Kunz, Sergej, Marie, Xavier, Urbaszek, Bernhard
Publikováno v:
Appl. Phys. Lett. 97, 051111 (2010)
We report strong heavy hole-light mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fit
Externí odkaz:
http://arxiv.org/abs/1006.0347
Autor:
Kuroda, T., Belhadj, T., Abbarchi, M., Mastrandrea, C., Gurioli, M., Mano, T., Ikeda, N., Sugimoto, Y., Asakawa, K., Koguchi, N., Sakoda, K., Urbaszek, B., Amand, T., Marie, X.
Publikováno v:
Phys. Rev. B 79, 035330 (2009)
We study photon bunching phenomena associated with biexciton-exciton cascade in single GaAs self-assembled quantum dots. Experiments carried out with a pulsed excitation source show that significant bunching is only detectable at very low excitation,
Externí odkaz:
http://arxiv.org/abs/0811.3261