Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Aasutosh Dave"'
Autor:
Aasutosh Dave, Qingwei Liu, Cynthia Zhu, Liguo Zhang, Yu Zhu, Feng Shao, Verne Xu, Omar El-Sewefy, Xuelong Shi, Jojo Pei
Publikováno v:
SPIE Proceedings.
It is evident that as industry moves towards 28 and 20 nm large scale production, more flexibility in source is eminent for better process margin. In this paper, we review different realms of illumination optimization techniques with combinations of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4124a8c2c654499eca20919b6dd932e1
https://doi.org/10.1117/12.2013704
https://doi.org/10.1117/12.2013704
Autor:
Omar El-Sewefy, Pat LaCour, GekSoon Chua, Dongqing Zhang, Vlad Liubich, Aasutosh Dave, Alvin Chua, Ying Gong, YeeMei Foong, Alex Tritchkov, Jacky Cheng, Robin Chia
Publikováno v:
SPIE Proceedings.
Source Mask Optimization (SMO) has become an integral part of resolution enhancement techniques (RET) for almost all critical layers at advanced technology nodes. Over the past couple of years, various flows have emerged for integrating SMO into main
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::775e8853fdca53bffa0a96622b712946
https://doi.org/10.1117/12.2013605
https://doi.org/10.1117/12.2013605
Publikováno v:
SPIE Proceedings.
Critical aspect ratio induced pattern collapse has been a concern for lithography process engineers since before the 180 nm node. This line bending can lead to pattern deformation or complete substrate adhesion failure. Several process improvements,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf7122f9d51ce66c64c8be222f20aa97
https://doi.org/10.1117/12.917885
https://doi.org/10.1117/12.917885
Autor:
Cynthia Zhu, Suk-Joo Lee, Ja-hum Ku, John L. Sturtevant, Thuy Do, Juhwan Kim, Aasutosh Dave, Jaeyeol Maeng, Uwe Hollerbach, Yuri Granik, No-Young Chung, Min-Chul Oh, Sunwook Jung, Kostas Adam, Hyung-Joo Youn
Publikováno v:
SPIE Proceedings.
Photolithography for the formerly "non-critical" implant blocking layers is becoming more challenging as edge placement control budgets for junction definition shrink with each node. In addition to the traditional proximity effects associated with th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c241c0acb297c484af10504a959e0fe1
https://doi.org/10.1117/12.917984
https://doi.org/10.1117/12.917984
Publikováno v:
SPIE Proceedings.
Critical aspect ratio induced pattern collapse has been a concern for lithography process engineers since before the 180 nm node. This has driven a steady reduction in photoresist thickness, as well as accelerated the introduction of hard mask materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8ac89ee5dd5767bfe03112e874712e1
https://doi.org/10.1117/12.898494
https://doi.org/10.1117/12.898494
Autor:
Byung-Sung Kim, Scott M. Mansfield, Moutaz Fakhry, Gandharv Bhatara, David O. S. Melville, Tadanobu Inoue, Jason E. Meiring, Bruce Durgan, Henning Haffner, Young O. Kim, Alexander Wei, Jaione Tirapu-Azpiroz, Aasutosh Dave, Alexander Tritchkov, Kehan Tian, Masaharu Sakamoto, Alan E. Rosenbluth, Gabriel Berger, Kostas Adam
Publikováno v:
SPIE Proceedings.
Source-mask optimization (SMO) in optical lithography has in recent years been the subject of increased exploration as an enabler of 22/20nm and beyond technology nodes [1-6]. It has been shown that intensive optimization of the fundamental degrees o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20e4e990a92d7e65fc9d9acdeacea47c
https://doi.org/10.1117/12.879703
https://doi.org/10.1117/12.879703
Publikováno v:
SPIE Proceedings.
Sub-Resolution Assist Features (SRAFs) have been extensively used to improve the process margin for isolated and semi-isolated features. It has been shown that compared to rule-based SRAFs, model-based placement of SRAFs can result in better overall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0504f64a50b596784efc32a77bb4357
https://doi.org/10.1117/12.879492
https://doi.org/10.1117/12.879492
Autor:
Yutaka Hojyo, Tim Lin, Aasutosh Dave, Thuy Do, Hiroyuki Shindo, John L. Sturtevant, Daisuke Hibino, Ir Kusnadi
Publikováno v:
SPIE Proceedings.
As design rules shrink, Optical Proximity Correction (OPC) becomes complicated. As a result, measurement points have increased, and improving the OPC model quality has become more difficult. From the viewpoint of decreasing OPC calibration runtime an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::286781fc19342b4a3d03ac3f020cfe17
https://doi.org/10.1117/12.879030
https://doi.org/10.1117/12.879030
Autor:
Young O. Kim, Emily Gallagher, Yuri Granik, Kafai Lai, Daniele Paolo Scarpazza, Nick Cobb, Tom Faure, Lei Zhuang, Saeed Bagheri, Alan E. Rosenbluth, Greg McIntyre, Laszlo Ladanyi, Andreas Waechter, Geoffrey W. Burr, Moutaz Fakhry, Michael Lam, Francisco Barahona, Jason E. Meiring, Kehan Tian, David O. S. Melville, Aasutosh Dave, Phil Strenski, Jon Lee, Jaione Tirapu-Azpiroz, Alexander Tritchkov, Hidemasa Muta, Masaharu Sakamoto, Tadanobu Inoue, Azalia A. Krasnoperova, Gabriel Berger, Alfred Wagner, Kostas Adam, Mike Hibbs, Daniel Corliss, Scott Halle
Publikováno v:
SPIE Proceedings.
In recent years the potential of Source-Mask Optimization (SMO) as an enabling technology for 22nm-and-beyond lithography has been explored and documented in the literature.1-5 It has been shown that intensive optimization of the fundamental degrees
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8973f93c622631fa266efeaff0ea8024
https://doi.org/10.1117/12.846716
https://doi.org/10.1117/12.846716
Publikováno v:
SPIE Proceedings.
Sub-Resolution Assist Features (SRAFs) have been used extensively to improve the process latitude for isolated and semi-isolated features in conjunction with off-axis illumination. These SRAFs have typically been inserted based upon rules which assig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fdf7579f49d7a1b1d3642b5eea1acaa
https://doi.org/10.1117/12.846620
https://doi.org/10.1117/12.846620