Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Aaron ZHAO"'
Autor:
Sin-Ho Jung, Helen Tang, Lauren Bohannon, Meagan Lew, David Jensen, Aaron Zhao, Anthony D Sung, Paul E Wischmeyer
Publikováno v:
BMJ Open, Vol 11, Iss 5 (2021)
Introduction The COVID-19 pandemic has proven to be an unprecedented challenge to worldwide health, and strategies to mitigate the spread and severity of COVID-19 infection are urgently needed. Emerging evidence suggests that the composition of the g
Externí odkaz:
https://doaj.org/article/3c8fdb2367494c63bb963c69acc05935
Autor:
Richard Kyung, Aaron Zhao
Publikováno v:
2020 IEEE International IOT, Electronics and Mechatronics Conference (IEMTRONICS).
In this paper, optimizing microfluidic technologies through a multiple channel network in a organ-on-a-chip (OOC) system which is a type of cell culture chip mechanics system were suggested. Using numerical and computer programming, this paper studie
Publikováno v:
Unmanned Systems Technology XX.
Publikováno v:
Unmanned Systems Technology XX.
Autor:
Sai TALLAVARJULA, Aaron ZHAO
Publikováno v:
SCIENTIA SINICA Informationis. 40:892-898
本文研究了原子层化学气相淀积ALCVD (atom layer chemical vapor deposi- tion) 方法淀积的HfO 2 /SiO 2 /p-Si MOS 电容的电特性. 高频时, 积累电容出现了频率色散现象. 针对双频C-V 法测量超薄HfO 2 /SiO 2 堆栈
Publikováno v:
Science China Information Sciences. 53:878-884
The electric characteristic of MOS capacitor with HfO2/SiO2/p-Si grown by ALCVD (atom layer chemical vapor deposition) is investigated. The C-V curves show that the accumulation capacitances take on the frequency dispersion at high frequency. For MOS
Publikováno v:
2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).
I-V characteristic of the HfO 2 /SiO 2 stack gate MIS capacitor is investigated. The gate leakage current in HfO 2 /SiO 2 stack gate MIS capacitor decreases after constant voltage stress, which is caused by electron trapping. By analyzing the experim