Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Aaron Thurber"'
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
High-performance memory production requires discovery of process anomalies that affect device performance. Optical metrology can monitor CDs of device structures, but has limited resolution for 3D NAND, especially towards the bottom of high aspect ra
Autor:
Amanda R. Boydstun, Nicholas L. McKibben, Aaron Thurber, Lloyd Lowe, Theron R. Fereday, Brian J. Frost, Seth M. Hubbard, Christian T. Wall, Jerry D. Harris, Jason Brotherton, Jennifer L. Strunk, Pamela Walker, Jesse S. Hyslop, Alex Punnoose, William B. Knowlton, Joanna R. Rusch, Cecelia C. Pena, Shem Purnell, Blake Rapp
Publikováno v:
Materials Science in Semiconductor Processing. 38:278-289
As an obvious candidate for a p-type dopant in ZnO, nitrogen remains elusive in this role. Nitrogen containing precursors are a potential means to incorporate nitrogen during MOCVD growth. One class of nitrogen-containing precursors are zinc acetate
Autor:
Youwei Du, Dmitri A. Tenne, Zhongda Pan, Alex Punnoose, Min Gu, Aaron Thurber, Yayi Hou, Charles B. Hanna, Jianhui Zhang, Guanjun Dong, Kaiyu Wang
Publikováno v:
Particle & Particle Systems Characterization. 32:596-603
Tuning the bandgap and cytotoxicity of ZnO nanoparticles (NPs) is very important, not only for customizing their optoelectronic and biomedical applications, but also for their cytotoxicity assay and safe usage. A unique soft-template of polyvinylpyrr
Autor:
Jerry D. Harris, Aaron Thurber, Alex Punnoose, Sushil K. Misra, Geoffrey L. Beausoleil, S. I. Andronenko
Publikováno v:
Journal of Nanoscience and Nanotechnology. 13:6798-6805
This paper reports an investigation on the role of transition-metal ions in producing ferromagnetism in CeO2 nanoparticles by electron paramagnetic resonance (EPR). Several samples of CeO2 nanoparticles annealed at 200, 300, 400, and 500 degrees C, d
Autor:
Joanna R. Walker, Jannah E. Fitch, Joshua A. Benjamin, Aaron Thurber, Daniel F. Nogales, Alex Punnoose, Jerry D. Harris, Jennifer L. Young, Brian J. Frost
Publikováno v:
Inorganica Chimica Acta. 377:14-19
The synthesis and single crystal X-ray structure of trans -[HNC 6 H 7 ][Cr(NCS) 4 (NC 6 H 7 ) 2 ] ( 1 ) and mer -[Cr(NCS) 3 (NC 6 H 7 ) 3 ] ( 2 ) are reported. Compound 1 was synthesized by refluxing chromium powder and thiourea in 4-methylpyridine.
Autor:
Alex Punnoose, Dmitri A. Tenne, John W. Rasmussen, Aaron Thurber, Charles B. Hanna, Denise Wingett, Jianhui Zhang
Publikováno v:
Advanced Functional Materials. 20:4358-4363
New fluorescein isothiocyanate/fluorescein/rhodamine B-doped ZnO composite nanostructures including tripods, tubes, and rods with tuned sizes have been designed and synthesized to greatly enhance the dye fluorescence up to ∼90 fold. The great fluor
Publikováno v:
Langmuir. 26:5273-5278
The open forced hydrolysis method and controllable silica growth based on bound water to polyvinylpyrrolidone molecules have been developed for the highly shape (including rhombohedra, semispheres, and rods) selective synthesis, self-assembly, and un
Publikováno v:
Applied Magnetic Resonance. 36:331-345
In this work, electron magnetic resonance (EMR) spectroscopy and magnetometry studies were employed to investigate the origin of the observed room-temperature ferromagnetism in chemically synthesized Sn1−x Fe x O2 powders. EMR data clearly establis
Publikováno v:
Journal of Materials Science: Materials in Electronics. 18:1151-1155
Recent studies have reported room-temperature ferromagnetism (FM) in Fe doped SnO2. The FM in semiconductors due to transition metal doping has been argued to be carrier mediated. Fluorine (F) doping in pure SnO2 has been reported to significantly in
Autor:
Jesse S, Hyslop, Amanda R, Boydstun, Theron R, Fereday, Joanna R, Rusch, Jennifer L, Strunk, Christian T, Wall, Cecelia C, Pena, Nicholas L, McKibben, Jerry D, Harris, Aaron, Thurber, Alex, Punnoose, Jason, Brotherton, Pamela, Walker, Lloyd, Lowe, Blake, Rapp, Shem, Purnell, William B, Knowlton, Seth M, Hubbard, Brian J, Frost
Publikováno v:
Materials science in semiconductor processing. 38
As an obvious candidate for a p-type dopant in ZnO, nitrogen remains elusive in this role. Nitrogen containing precursors are a potential means to incorporate nitrogen during MOCVD growth. One class of nitrogen-containing precursors are zinc acetate