Zobrazeno 1 - 10
of 355
pro vyhledávání: '"Aaron Thean"'
Autor:
Adrien Vaysset, Mauricio Manfrini, Dmitri E. Nikonov, Sasikanth Manipatruni, Ian A. Young, Geoffrey Pourtois, Iuliana P. Radu, Aaron Thean
Publikováno v:
AIP Advances, Vol 6, Iss 6, Pp 065304-065304-6 (2016)
The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified
Externí odkaz:
https://doaj.org/article/2c94293bbbdd4f01ae71ba477c5e5d1a
Autor:
Xiao Gong, Aaron Thean, Kaizhen Han, Jiuren Zhou, Qiwen Kong, Haiwen Xu, Chengkuan Wang, Yuye Kang, Haibo Wang, Chen Sun, Subhranu Samanta, Jishen Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 68:6610-6616
We report high-performance amorphous Indium-Gallium-Zinc-Oxide nanowire field-effect transistors (α -IGZO NW-FETs) featuring an ultrascaled nanowire width ( $W_{NW}$ ) down to ~20 nm. The device with 100 nm channel length ( $L_{CH}$ ) and ~25 nm $W_
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81a94506730976ec44a6b7c3e7e6f3b1
https://doi.org/10.1109/ted.2021.3113893
https://doi.org/10.1109/ted.2021.3113893
Publikováno v:
IEEE Journal of Solid-State Circuits. 56:2065-2076
This article presents a wireless multi-channel sensor interface circuit for emerging e-skin applications. The proposed interface circuit uses a CDMA-like sensing method to simultaneously record 16-channel resistive sensors and 16-channel capacitive s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c317868c182120b5af21204be9bc1d1
https://doi.org/10.1109/jssc.2020.3030995
https://doi.org/10.1109/jssc.2020.3030995
Autor:
Tonio Buonassisi, Aaron Thean, Yida Li, Baoshan Tang, Kain Lu Low, Joydeep Ghosh, Meftahul Ferdaus, Senthilnath Jayavelu, Chen-Khong Tham, Jin Feng Leong, Shang Yi Lim, X.P. Wang, Savitha Ramasamy, Jieming Pan, E. G. Zamburg
Publikováno v:
ACS Applied Nano Materials. 4:6903-6915
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6bcf92b61b1e013d160ce92e8018727
https://doi.org/10.1021/acsanm.1c00960
https://doi.org/10.1021/acsanm.1c00960
Publikováno v:
IEEE Internet of Things Journal. 8:9219-9232
Untethered computing using deep convolutional neural networks (DCNNs) at the edge of IoT with limited resources requires systems that are exceedingly power and area-efficient. Analog in-memory matrix-matrix multiplications enabled by emerging memorie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a65217f04e4328e8ded3f4794f23b254
https://doi.org/10.1109/jiot.2021.3058015
https://doi.org/10.1109/jiot.2021.3058015
Autor:
Xinke Wang, Xiao Gong, Jie Liang, R. Berthelon, Christophe Maleville, Franck Arnaud, Aaron Thean, Haiwen Xu, Bich-Yen Nguyen, Olivier Weber, Eugene Y.-J. Kong, Chen Sun, Walter Schwarzenbach
Publikováno v:
IEEE Transactions on Electron Devices. 68:1425-1431
The relaxation of tensile strain in fully depleted (FD) strained silicon-on-insulator (SSOI) by means of ion implantation is experimentally demonstrated in this work. This could enable SiGe p-channel field-effect transistors (pFETs) with high compres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd20888b0b4dbccf5c8806fbc2f14ab9
https://doi.org/10.1109/ted.2021.3059256
https://doi.org/10.1109/ted.2021.3059256
Publikováno v:
IEEE Transactions on Electron Devices. 68:1050-1056
We investigate the effect of channel layer thickness on effective mobility ( $\mu _{\text {eff}}$ ) in the sub-10-nm regime of amorphous indium–gallium–zinc–oxide thin-film transistors ( $\alpha $ -IGZO TFTs). TFT devices with extremely scaled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::423a57e25de15733e9c3ad63eb2f86f3
https://doi.org/10.1109/ted.2020.3048920
https://doi.org/10.1109/ted.2020.3048920
Autor:
Yu Cao, Ting Mei, Lu Ding, Dongyang Wan, Baohu Huang, Yan Liu, Christian A. Nijhuis, Thirumalai Venkatesan, Guanghui Yuan, Soo Jin Chua, Aaron Thean
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 5, Pp 1-10 (2020)
A CMOS-compatible plasmonic waveguide with a metal or metal-like strip sandwiched in-between dielectrics has been proposed for intra-chip communication in the more-than-Moore era. A sequence of numerical models has been presented to evaluate the plas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70f04293f3ffd9b7b618f9ab3e0f4527
https://doi.org/10.1109/jphot.2020.3024119
https://doi.org/10.1109/jphot.2020.3024119
Autor:
Kaizhen Han, Hasita Velluri, Annie Kumar, Aaron Thean, Yida Li, Xuanyao Fong, Shengqiang Xu, Umesh Chand, Chengkuan Wang, Ying Wu, Xiao Gong, Subhranu Samanta
Publikováno v:
IEEE Electron Device Letters. 41:856-859
We report high performance amorphous Indium-Gallium-Zinc-Oxide ( ${a}$ -IGZO) thin-film transis- tors (TFTs) with 10 nm atomic-layer-deposited HfO2 as the gate dielectric, achieving subthreshold swing ( SS ) of 70.2 mV/decade, high effective mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22df96411050354ca021cfbb62c9f2da
https://doi.org/10.1109/led.2020.2985787
https://doi.org/10.1109/led.2020.2985787
Publikováno v:
IEEE Journal of Solid-State Circuits. 55:1361-1373
This article presents a multi-channel capacitance-to-digital converter (CDC) circuits using the continuous-time Walsh coding multiplexing. The proposed circuits modulate the input capacitive sensors with orthogonal codes, enable simultaneous read-in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::586e6d861c528c03914305eb73e7001a
https://doi.org/10.1109/jssc.2019.2949232
https://doi.org/10.1109/jssc.2019.2949232