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pro vyhledávání: '"Aaron O. Vanderpool"'
Autor:
Aaron O. Vanderpool, M. Taylor
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:142-147
A method to reduce the diffusion of boron in ultra-shallow junctions (USJ) has been found using the co-implantation of fluorine and carbon. In this 24 designed experiment a 40% reduction of B diffusion in the presence of a shallow F and C implant was
Publikováno v:
AIP Conference Proceedings.
The production of Ultra Shallow Junctions (USJ) in silicon devices requires controlling the Transient Enhanced Diffusion (TED) of electrical dopants. USJ development has focused on boron because hole mobility is lower than electron mobility in silico