Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Aaron L. Swecker"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 17:619-628
Wafer inspection schemes for next-generation lithography (NGL) will play a key role in controlling defect mechanisms and maintaining an acceptable yield. Developing these wafer inspection schemes will require characterization and optimization of deep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfd7366bc6508e9647b26a802b2117e5
https://doi.org/10.1109/tsm.2004.835719
https://doi.org/10.1109/tsm.2004.835719
Publikováno v:
13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science and Technology of Semiconductor Manufacturing. ASMC 2002 (Cat. No.02CH37259).
Wafer inspection schemes for next generation lithography (NGL) will play a key role in controlling defect mechanisms and maintaining an acceptable yield. Developing these wafer inspection schemes will require characterization and optimization of DUV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96e6d361e4dd5f8c4b576f29989ac857
https://doi.org/10.1109/asmc.2002.1001640
https://doi.org/10.1109/asmc.2002.1001640
Publikováno v:
1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023).
In this paper, the use of Fourier filtering in dark field defect detection is investigated for the post chemical mechanical polishing (CMP) inspection application using a simulation tool, METRO. Advanced detection techniques have been studied to dete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f7dd8a7f6ed0c14de6b50015add065e
https://doi.org/10.1109/issm.1997.664588
https://doi.org/10.1109/issm.1997.664588
Publikováno v:
1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023).
The transformation of contaminating particles into defects and then electrical faults is a very complex process which depends on the defect location, size, material and the underlying IC topography. A rigorous topography simulator, METROPOLE has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3ae20db2000f5fa0ce823b52105fbd0
https://doi.org/10.1109/issm.1997.664586
https://doi.org/10.1109/issm.1997.664586
Publikováno v:
1997 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop ASMC 97 Proceedings.
In this paper, various defect detection schemes are investigated for the post chemical mechanical polishing (CMP) inspection application using the simulation tool, METRO. Both bright field and dark field detection schemes have been studied to determi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c49aef815badbb4815c30c6001855c53
https://doi.org/10.1109/asmc.1997.630749
https://doi.org/10.1109/asmc.1997.630749
Publikováno v:
SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.
The detection of critical defects on modern VLSI wafers is a challenging and complex problem. Simulation of these critical defects allows for rapid characterization and optimization of in-line detection schemes. In this paper we introduce a 3D electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4eefcd1f19fc134c174e20663c24286
https://doi.org/10.1109/sispad.1997.621358
https://doi.org/10.1109/sispad.1997.621358
Publikováno v:
Scopus-Elsevier
Particulate contamination deposited on silicon wafers is typically the dominant reason for yield loss in VLSI manufacturing. The transformation of contaminating particles into defects and then electrical faults is a very complex process which depends
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0784892069a8f1a0e7fe3dc3ca49562a
https://doi.org/10.1109/sispad.1997.621407
https://doi.org/10.1109/sispad.1997.621407
Publikováno v:
SPIE Proceedings.
The production of 70nm devices is projected for the year 2008. With this projection, optical lithography will become more challenging since as the device size goes down, the potential for introducing killer defects also increases dramatically. Wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de6987853cc6dfe001dfea358824fcf3
https://doi.org/10.1117/12.473455
https://doi.org/10.1117/12.473455
Publikováno v:
SPIE Proceedings.
We have extended the capability of a vector 3D lithography simulator METROPOLE-3D from a photomask simulator to become a full 3D photolithography simulator. It is designed to run moderately fast on conventional engineering workstations. METROPOLE-3D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25a341ade68d541d7f2d09460c5e9b05
https://doi.org/10.1117/12.310805
https://doi.org/10.1117/12.310805
Publikováno v:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III.
Particulate contamination deposited on silicon wafers is typically the dominant reason for yield loss in VLSI manufacturing. The transformation of contaminating particles into defects and then electrical faults is a very complex process which depends
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09fe9b642866f36790f798e32f62c43c
https://doi.org/10.1117/12.284699
https://doi.org/10.1117/12.284699