Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Aaron J. Muhowski"'
Autor:
Yinan Wang, Aaron J. Muhowski, Leland Nordin, Sukrith Dev, Monica Allen, Jeffery Allen, Daniel Wasserman
Publikováno v:
APL Photonics, Vol 9, Iss 1, Pp 016117-016117-11 (2024)
The primary challenge for long-wavelength infrared (λ = 8–13 µm) detection has long been the mitigation of dark current while achieving a high conversion efficiency of optical to electrical signals. Often overlooked is the bandwidth of detector r
Externí odkaz:
https://doaj.org/article/c5d75f78fd78481a8ccd97650c779d61
Autor:
Jarod Meyer, Aaron J. Muhowski, Leland Nordin, Eamonn Hughes, Brian Haidet, Daniel Wasserman, Kunal Mukherjee
Publikováno v:
APL Materials, Vol 9, Iss 11, Pp 111112-111112-9 (2021)
We report on photoluminescence in the 3–7 µm mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatures belo
Externí odkaz:
https://doaj.org/article/50984fd053bb4503bbce57bd2d175dc7
Autor:
Andrew H. Jones, Stephen D. March, Adam A. Dadey, Aaron J. Muhowski, Seth R. Bank, Joe C. Campbell
Publikováno v:
IEEE Journal of Quantum Electronics. 58:1-6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deb3d6601c9355c3a3ccbf2afa1d9185
https://doi.org/10.1109/jqe.2022.3149532
https://doi.org/10.1109/jqe.2022.3149532
Publikováno v:
IEEE Photonics Technology Letters. 34:615-618
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d92aecff01329e63cdaa95d0e07eeb3d
https://doi.org/10.1109/lpt.2022.3175110
https://doi.org/10.1109/lpt.2022.3175110
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7e42ee1d85c56a1637d7d26b1b31027
https://doi.org/10.1109/jstqe.2021.3131275
https://doi.org/10.1109/jstqe.2021.3131275
Autor:
Adam A, Dadey, Andrew H, Jones, Andrew J, McArthur, Ellie Y, Wang, Aaron J, Muhowski, Seth R, Bank, Joe C, Campbell
Publikováno v:
Optics express. 30(15)
Mid-IR is a useful wavelength range for both science and military applications due to its low atmospheric attenuation and ability to be used for passive detection. However, many solutions for detecting light in this spectral region need to be operate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::fd800c81cf715e417fd01d6591d09942
https://pubmed.ncbi.nlm.nih.gov/36236902
https://pubmed.ncbi.nlm.nih.gov/36236902
Publikováno v:
Metamaterials, Metadevices, and Metasystems 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::951becc976236d2fb8a2ff5119acfcc9
https://doi.org/10.1117/12.2633592
https://doi.org/10.1117/12.2633592
Publikováno v:
Optics letters. 47(11)
We demonstrate efficient filtering of coherent light from a broad spectral background. A Michelson interferometer is used to effectively filter out the coherent emission of mid-infrared lasers from the co-propagating incoherent emission of a broadban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56c19563f6521eb7a27782506d60c368
https://pubmed.ncbi.nlm.nih.gov/35648895
https://pubmed.ncbi.nlm.nih.gov/35648895
Autor:
Pankul Dhingra, Aaron J. Muhowski, Brian D. Li, Yukun Sun, Ryan D. Hool, Daniel Wasserman, Minjoo Larry Lee
Publikováno v:
Journal of Applied Physics. 133:103101
III-V lasers based on self-assembled quantum dots (QDs) have attracted widespread interest due to their unique characteristics, including low threshold current density (Jth), low sensitivity to backreflections, and resistance to threading dislocation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd5e58ccf7dd93675bc8810d27a70ced
https://doi.org/10.1063/5.0136621
https://doi.org/10.1063/5.0136621
Autor:
Alec M. Skipper, Priyanka Petluru, Daniel J. Ironside, Ashlee M. García, Aaron J. Muhowski, Daniel Wasserman, Seth R. Bank
Publikováno v:
Applied Physics Letters. 120
Optoelectronic devices in the mid-infrared have attracted significant interest due to numerous potential applications in communications and sensing. Molecular beam epitaxial (MBE) growth of highly doped InAs has emerged as a promising “designer met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bb953a27821c003d39b08bbf92887cc
https://doi.org/10.1063/5.0094677
https://doi.org/10.1063/5.0094677