Zobrazeno 1 - 10
of 131
pro vyhledávání: '"Aaron D. Franklin"'
Autor:
Joseph Rich, Brian Cole, Teng Li, Brandon Lu, Hanyu Fu, Brittany N. Smith, Jianping Xia, Shujie Yang, Ruoyu Zhong, James L. Doherty, Kanji Kaneko, Hiroaki Suzuki, Zhenhua Tian, Aaron D. Franklin, Tony Jun Huang
Publikováno v:
Microsystems & Nanoengineering, Vol 10, Iss 1, Pp 1-12 (2024)
Abstract The addition of surface acoustic wave (SAW) technologies to microfluidics has greatly advanced lab-on-a-chip applications due to their unique and powerful attributes, including high-precision manipulation, versatility, integrability, biocomp
Externí odkaz:
https://doaj.org/article/c84c52876f394ba5b539863950d95167
Autor:
Yuh-Chen Lin, Felicia McGuire, Steven Noyce, Nicholas Williams, Zhihui Cheng, Joseph Andrews, Aaron D. Franklin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 645-649 (2019)
Negative capacitance (NC) field-effect transistors (FETs) with 2-D semiconducting channels have become increasingly attractive due to their ability to produce sub-60 mV/dec switching behavior in a physically scalable device. However, it has yet to be
Externí odkaz:
https://doaj.org/article/d7bd510c92ab4f3b92d5cf9d76e7fe5c
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 116-120 (2018)
At a time when the scientific community is overrun with conferences, workshops, and congresses to discuss all facets of innovation, much can be learned from considering a meeting that has withstood the test of time: the Device Research Conference (DR
Externí odkaz:
https://doaj.org/article/1653b75599fd40399145e975f21e587e
Autor:
Brittany N. Smith, Hope Meikle, James L. Doherty, Shiheng Lu, Gianna Tutoni, Matthew L. Becker, Michael J. Therien, Aaron D. Franklin
Publikováno v:
Nanoscale. 14(45)
Printed carbon nanotube thin-film transistors (CNT-TFTs) are candidates for flexible electronics with printability on a wide range of substrates. Among the layers comprising a CNT-TFT, the gate dielectric has proven most difficult to additively print
Publikováno v:
Nano Letters. 23:2100-2106
Autor:
Colleen McDonnell, Faris M. Albarghouthi, Ryan Selhorst, Nancy Kelley-Loughnane, Aaron D. Franklin, Rahul Rao
Publikováno v:
ACS Omega. 8:1597-1605
Publikováno v:
Science. 378:726-732
Semiconducting carbon nanotubes are robust molecules with nanometer-scale diameters that can be used in field-effect transistors, from larger thin-film implementation to devices that work in conjunction with silicon electronics, and can potentially b
Autor:
Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin, Curt A. Richter
Publikováno v:
Nature Electronics
Nature electronics 5(7), 416-423 (2022). doi:10.1038/s41928-022-00798-8
Nature electronics 5(7), 416-423 (2022). doi:10.1038/s41928-022-00798-8
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking
Distinct Contact Scaling Effects in MoS2 Transistors Revealed with Asymmetrical Contact Measurements
Autor:
Zhihui Cheng, Jonathan Backman, Huairuo Zhang, Hattan Abuzaid, Guoqing Li, Yifei Yu, Linyou Cao, Albert V. Davydov, Mathieu Luisier, Curt A. Richter, Aaron D. Franklin
Publikováno v:
Advanced Materials, 35 (21)
2D semiconducting materials have immense potential for future electronics due to their atomically thin nature, which enables better scalability. While the channel scalability of 2D materials has been extensively studied, the current understanding of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c481d176a8b45de90e166fd282025492
https://hdl.handle.net/20.500.11850/609691
https://hdl.handle.net/20.500.11850/609691
Autor:
Zhihui Cheng, Huairuo Zhang, Son T. Le, Hattan Abuzaid, Guoqing Li, Linyou Cao, Albert V. Davydov, Aaron D. Franklin, Curt A. Richter
Publikováno v:
ACS Nano. 16:5316-5324
Two-dimensional (2D) van der Waals materials are subject to mechanical deformation and thus forming bubbles and wrinkles during exfoliation and transfer. A lack of interfacial "flatness" has implications for interface properties, such as those formed