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pro vyhledávání: '"Aaron Arehart"'
Autor:
Hemant Ghadi, Joe F. McGlone, Evan Cornuelle, Alexander Senckowski, Shivam Sharma, Man Hoi Wong, Uttam Singisetti, Ymir Kalmann Frodason, Hartwin Peelaers, John L. Lyons, Joel B. Varley, Chris G. Van de Walle, Aaron Arehart, Steven A. Ringel
Publikováno v:
APL Materials, Vol 11, Iss 11, Pp 111110-111110-9 (2023)
The ability to achieve highly resistive beta-phase gallium oxide (β-Ga2O3) layers and substrates is critical for β-Ga2O3 high voltage and RF devices. To date, the most common approach involves doping with iron (Fe), which generates a moderately dee
Externí odkaz:
https://doaj.org/article/ebff1caf478145fab8f899b2351bdd6f
Publikováno v:
62nd Electronic Materials Conference.
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).