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pro vyhledávání: '"Aaron Dehne"'
Publikováno v:
Nanotechnology. 18:455303
Controlled nucleation of InAs quantum dots has been achieved by Ga + focused ion beam modification of GaAs(100) surfaces. Quantum dots may be induced in irradiated regions despite the fact that the deposited thickness is less than the critical thickn
Focused ion beam modification of surfaces for directed self-assembly of InAs/GaAs(001) quantum dots.
Publikováno v:
Nanotechnology; Nov2007, Vol. 18 Issue 45, p45530-45530, 1p