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Autor:
Bhat, Zarak, Aamir Ahsan, Sheikh
Publikováno v:
IEEE Transactions on Electron Devices; November 2024, Vol. 71 Issue: 11 p6544-6551, 8p
Publikováno v:
IEEE Transactions on Electron Devices; October 2024, Vol. 71 Issue: 10 p6452-6455, 4p
Autor:
Rasik Rashid Malik, Mehak Ashraf Mir, Zarak Bhat, Ahtisham Pampori, Yogesh Singh Chauhan, Sheikh Aamir Ahsan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 789-797 (2021)
In this work, we report the development of a new physics-based analytical model for current and charge characteristics of Double Channel (DC) Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs). The model has at its core the self-consisten
Externí odkaz:
https://doaj.org/article/69ef912a32b0470d9b60c8a4c9d9f025
Autor:
Mohammad Sajid Nazir, Pragya Kushwaha, Ahtisham Pampori, Sheikh Aamir Ahsan, Yogesh Singh Chauhan
Publikováno v:
IEEE Transactions on Electron Devices. 69:6016-6022
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46b130809046b127e7049af21b9539a6
https://doi.org/10.1109/ted.2022.3204523
https://doi.org/10.1109/ted.2022.3204523
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 5, Pp 310-319 (2017)
In this paper, a consistent DC to RF modeling solution for Al gallium nitride (GaN)/GaN high electron mobility transistors is demonstrated that is constructed around a surface-potential-based core. Expressions for drain current and intrinsic terminal
Externí odkaz:
https://doaj.org/article/f9de71343abb49e4881535e017e0ee28
Publikováno v:
IEEE Transactions on Electron Devices. 69:2275-2281
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dc478f829ac87ea9ae18111afb7915a
https://doi.org/10.1109/ted.2022.3156966
https://doi.org/10.1109/ted.2022.3156966
Autor:
Zarak Bhat, Sheikh Aamir Ahsan
Publikováno v:
2022 IEEE 19th India Council International Conference (INDICON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a10babbaa60bf40a70fbdb264e7f8c1c
https://doi.org/10.1109/indicon56171.2022.10039804
https://doi.org/10.1109/indicon56171.2022.10039804
Autor:
Ahtisham Pampori, Sheikh Aamir Ahsan, Sanjay Kumar Tomar, Yogesh Singh Chauhan, Meena Mishra, Raghvendra Dangi, Umakant Goyal
Publikováno v:
IEEE Transactions on Electron Devices. 68:3302-3307
In this article, we present a surface-potential-based approach to model the bias-dependent effective velocity observed in AlGaN/GaN high-electron-mobility transistors (HEMTs) due to optical phonon scattering. Our model precisely reproduces the progre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::378c08c61b5633a5d65177c3d233fc51
https://doi.org/10.1109/ted.2021.3078717
https://doi.org/10.1109/ted.2021.3078717
Publikováno v:
International Journal of Medical and Biomedical Studies. 6
Background: Diabetes is a chronic metabolic disease because of the elevated levels of glucose in the blood. And usually most of the diabetic patients are left undiagnosed in their early stages of the disease because of the unnoticeable symptomsby the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d84d8aa9aec0221b65af903dacee4135
https://doi.org/10.32553/ijmbs.v6i7.2579
https://doi.org/10.32553/ijmbs.v6i7.2579