Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Aakash Jadhav"'
Autor:
Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Sourajeet Roy, Biplab Sarkar
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 797-807 (2022)
In this paper, a technique to develop small signal circuit (SSC) models of AlGaN/GaN high electron mobility transistors (HEMTs) using dependent current sources is presented. In this technique, experimentally measured broadband Y-parameters of AlGaN/G
Externí odkaz:
https://doaj.org/article/1f5d9dc0ce6a4a54a88802bd65a88721
Autor:
Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Yoshio Honda, Sourajeet Roy, Hiroshi Amano, Biplab Sarkar
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 570-581 (2021)
Traditional lumped small signal equivalent circuit models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are made up of constant valued circuit elements. Such models are unable to capture the high frequency beha
Externí odkaz:
https://doaj.org/article/802bb96512794ca8844a04843f7916f6
Publikováno v:
International Journal for Research in Applied Science and Engineering Technology. 10:1794-1797
Inability to talk is taken into account to be true incapacity. folks with this incapacity use totally different modes to speak with others, there are variety of strategies accessible for his or her communication one such common methodology of communi
Autor:
Biplab Sarkar, Shunpei Yamashita, Aakash Jadhav, Takashi Ozawa, Akio Wakejima, Yoshio Honda, Sourajeet Roy, Joel T. Asubar, Masaaki Kuzuhara, Manato Deki, Ali Baratov, Hiroshi Amano, Shugo Nitta
Publikováno v:
IEEE Transactions on Electron Devices. 68:6059-6064
Conventional lumped small signal circuit (SSC) models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are derived from the low frequency portion of the experimentally measured Y-parameters. Consequently, these mo
Publikováno v:
Journal of Electronic Materials. 50:3731-3738
Barrier height at the interface between metal and polar AlxGa1−xN (0 ≤ x ≤ 1) epitaxial films was investigated using X-ray photoelectron spectroscopy and interface induced gap states (IFIGS) model. The opposite nature of polarization charge yie
Autor:
Hiroshi Amano, Joel T. Asubar, Masaaki Kuzuhara, Biplab Sarkar, Akio Wakejima, Ali Baratov, Aakash Jadhav, Sourajeet Roy, Yoshio Honda, Takashi Ozawa, Manato Deki, Shunpei Yamashita
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 570-581 (2021)
Traditional lumped small signal equivalent circuit models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are made up of constant valued circuit elements. Such models are unable to capture the high frequency beha
Autor:
Pramod Reddy, Ronny Kirste, Biplab Sarkar, Andrew Klump, Zlatko Sitar, Pegah Bagheri, Seiji Mita, Ramon Collazo, Aakash Jadhav, Dolar Khachariya, Shashwat Rathkanthiwar
Publikováno v:
Semiconductor Science and Technology. 37:015003
In this work, an alternative scheme to estimate the resistivity and ionization energy of Al-rich p-AlGaN epitaxial films is developed using two large-area ohmic contacts. Accordingly, the resistivities measured using current–voltage measurements we
Publikováno v:
Journal of Vacuum Science & Technology B. 39:040601
From an analysis of Pd contact Schottky diodes fabricated on (100) β-Ga2O3 wafers, in combination with data extracted from published work, we show that the barrier height inhomogeneity commonly observed in β-Ga2O3 Schottky diodes has a strong corre