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pro vyhledávání: '"ASIL UĞURLU, Hatice"'
Autor:
ASIL UĞURLU, Hatice1 haticeasil@isparta.edu.tr
Publikováno v:
Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi. Jun2022, Vol. 12 Issue 2, p752-760. 9p.
Autor:
ASIL UĞURLU, Hatice
Publikováno v:
Volume: 27, Issue: 1 158-167
Yüzüncü Yıl Üniversitesi Fen Bilimleri Enstitüsü Dergisi
Yüzüncü Yıl Üniversitesi Fen Bilimleri Enstitüsü Dergisi
The electrical properties of the Ti/p-Si Schottky diode were investigated as a function of temperature within the temperature interval of 80 K-300 K and in 20 K steps. Fundamental diode parameters such as ideality factor (n), barrier height (Фb) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=tubitakulakb::35041680ff04659cf43adcde698b7da0
https://dergipark.org.tr/tr/pub/yyufbed/issue/68588/1058643
https://dergipark.org.tr/tr/pub/yyufbed/issue/68588/1058643
