Zobrazeno 1 - 10
of 40
pro vyhledávání: '"APALKOV, DMYTRO"'
The balance between low power consumption and high efficiency in memory devices is a major limiting factor in the development of new technologies. Magnetic random access memories (MRAM) based on CoFeB/MgO magnetic tunnel junctions (MTJs) have been pr
Externí odkaz:
http://arxiv.org/abs/1912.09761
Autor:
Meo, Andrea, Chureemart, Phanwadee, Wang, Shuxia, Chepulskyy, Roman, Apalkov, Dmytro, Chantrell, Roy W., Evans, Richard F. L.
Publikováno v:
Sci Rep 7, 16729 (2017)
Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for reducing
Externí odkaz:
http://arxiv.org/abs/1704.00106
We present spin transfer switching results for MgO based magnetic tunneling junctions (MTJs)with large tunneling magnetoresistance (TMR) ratio of up to 150% and low intrinsic switching current density of 2-3 x 10 MA/cm2. The switching data are compar
Externí odkaz:
http://arxiv.org/abs/cond-mat/0510204
Autor:
Huai, Yiming ⁎, Pakala, Mahendra, Diao, Zhitao, Apalkov, Dmytro, Ding, Yunfei, Panchula, Alex
Publikováno v:
In Journal of Magnetism and Magnetic Materials 2006 304(1):88-92
Autor:
Sampan-A-Pai, Sutee, Chureemart, Jessada, Chantrell, Roy W., Chepulskyy, Roman, Wang, Shuxia, Apalkov, Dmytro, Evans, Richard F.L., Chureemart, Phanwadee
We theoretically investigate the temperature and thickness dependence of the effective Gilbert damping constant (α) in the Co-Fe-B/MgO system using atomistic spin dynamics. We consider a high damping constant at the interface layer and a low damping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::29bfe3034bf3f24163deba474de6ac33
https://eprints.whiterose.ac.uk/145500/1/PhysRevApplied.11.044001.pdf
https://eprints.whiterose.ac.uk/145500/1/PhysRevApplied.11.044001.pdf
Akademický článek
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Autor:
Zhitao Diao, Pakala, Mahendra, Panchula, Alex, Yunfei Ding, Apalkov, Dmytro, Lien-Chang Wang, Chen, Eugene, Yiming Huai
Publikováno v:
Journal of Applied Physics; 4/15/2006, Vol. 99 Issue 8, p08G510, 5p, 1 Black and White Photograph, 6 Graphs
Akademický článek
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Autor:
Bose, Thomas, Cuadrado, Ramon, Evans, Richard F L, Chepulskii, Roman V., Apalkov, Dmytro, Chantrell, Roy W.
MgO bilayer systems emphasizing the influence of the iron layer thickness on the geometry, the electronic structure and the magnetic properties. Our calculations ensure the unconstrained structural relaxation at scalar relativistic level for various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::47b0cc22d47f8c46453baacf9e2aa90b
https://eprints.whiterose.ac.uk/103119/1/FeMgO_Sub_JPCM_Revised.pdf
https://eprints.whiterose.ac.uk/103119/1/FeMgO_Sub_JPCM_Revised.pdf
Publikováno v:
Journal of Magnetism and Magnetic Materials. 321:566-571
An optimal write process is essential for realizing the high-density potential of perpendicular recording. An analytic Williams–Comstock-type model of transition width is derived, which is based on a linear transition shape. This model is used to e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f33046951f05a072636a492d8063da16
https://doi.org/10.1016/j.jmmm.2008.08.105
https://doi.org/10.1016/j.jmmm.2008.08.105