Zobrazeno 1 - 10
of 198
pro vyhledávání: '"ANH LE DUC"'
Autor:
Takeda, Takahito, Arai, Takuma, Yamagami, Kohei, Anh, Le Duc, Tanaka, Masaaki, Kobayashi, Masaki, Ohya, Shinobu
Recent studies have shown that the magnetic properties of the ferromagnetic perovskite oxide La$_{2/3}$ Sr$_{1/3}$ MnO$_3$ (LSMO) grown on an SrTiO3 (STO) substrate, such as its magnetic moment and Curie temperature, can be improved by releasing the
Externí odkaz:
http://arxiv.org/abs/2402.01179
Autor:
Inagaki, Kohdai, Ishihara, Keita, Hotta, Tomoki, Seki, Yuichi, Takeda, Takahito, Ishida, Tatsuhiro, Ootsuki, Daiki, Kawasaki, Ikuto, Fujimori, Shin-ichi, Tanaka, Masaaki, Anh, Le Duc, Kobayashi, Masaki
Diamond-type structure allotrope {\alpha}-Sn is attracting much attention as a topological Dirac semimetal (TDS). In this study, we demonstrate that {\alpha}-Sn undergoes a phase transition to another allotrope {\beta}-Sn with superconductivity at lo
Externí odkaz:
http://arxiv.org/abs/2310.00652
Autor:
Ishihara, Keita, Anh, Le Duc, Hotta, Tomoki, Inagaki, Kohdai, Kobayashi, Masaki, Tanaka, Masaaki
Superconductor/topological material heterostructures are intensively studied as a platform for topological superconductivity and Majorana physics. However, the high cost of nanofabrication and the difficulty of preparing high-quality interfaces betwe
Externí odkaz:
http://arxiv.org/abs/2308.00893
Autor:
Okano, Ryo, Hotta, Tomoki, Takeda, Takahito, Araki, Kohsei, Takase, Kengo, Anh, Le Duc, Sakamoto, Shoya, Takeda, Yukiharu, Fujimori, Atsushi, Tanaka, Masaaki, Kobayashi, Masaki
Fe-doped III-V ferromagnetic semiconductor (FMS) (In,Fe)Sb is a promising material for spintronic device applications because of the n-type carrier conduction and the ferromagnetism with high Curie temperature (TC > 300 K). To clarify the mechanism o
Externí odkaz:
http://arxiv.org/abs/2202.04286
The magnetic proximity effect (MPE), ferromagnetic coupling at the interface of magnetically dissimilar layers, attracts much attention as a promising pathway for introducing ferromagnetism into a high-mobility non-magnetic conducting channel. Recent
Externí odkaz:
http://arxiv.org/abs/2112.09286
The two-dimensional electron gas formed at interfaces between SrTiO$_3$ and other materials has attracted much attention since extremely efficient spin-to-charge current conversion has been recently observed at these interfaces. This has been attribu
Externí odkaz:
http://arxiv.org/abs/2111.12275
Autor:
Takeda, Takahito, Sakamoto, Shoya, Anh, Le Duc, Takeda, Yukiharu, Fujimori, Shin-ichi, Kitamura, Miho, Horiba, Koji, Kumigashira, Hiroshi, Fujimori, Atsushi, Tanaka, Masaaki, Kobayashi, Masaki
Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temper
Externí odkaz:
http://arxiv.org/abs/2108.08598
Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromag
Externí odkaz:
http://arxiv.org/abs/2106.05902
Autor:
Hotta, Tomoki, Takase, Kengo, Takiguchi, Kosuke, Sriharsha, Karumuri, Anh, Le Duc, Tanaka, Masaaki
We study the growth and properties of quaternary-alloy ferromagnetic semiconductor (FMS) (In0.94-x,Gax,Fe0.06)Sb (x = 5% - 30%, Fe concentration is fixed at 6%) grown by low temperature molecular beam epitaxy (LT-MBE).Reflection high-energy electron
Externí odkaz:
http://arxiv.org/abs/2106.00938
Publikováno v:
Adv. Mater. 2104645 (2021)
{\alpha}-Sn with a diamond-type crystal structure provides an ideal avenue to investigate novel topological properties owing to its rich diagram of topological phases and simple elemental material structure. Thus far, however, realisation of high-qua
Externí odkaz:
http://arxiv.org/abs/2105.13884