Zobrazeno 1 - 6
of 6
pro vyhledávání: '"ANATOLII V. DVURECHENSKII"'
Autor:
Natalia P. Stepina, M. S. Galkov, Mikhail R. Predtechenskiy, Alexander E. Bezrodny, Viktor V. Kirienko, Anatolii V. Dvurechenskii
Publikováno v:
Modern Electronic Materials, Vol 5, Iss 1, Pp 21-26 (2019)
Buckypapers (BPs) with carbon nanotubes (CNTs) are very promising for a lot of applications, in which their high conductance, strength and small weight are required. In this work, isotropic BPs were prepared using the solution-based deposition that i
Externí odkaz:
https://doaj.org/article/a08344977eb546eeb4214d75fadbbb2b
Autor:
Sergei D. Baranovskii, Pauline Höhbusch, Alexey V. Nenashev, Anatolii V. Dvurechenskii, Marina Gerhard, Dirk Hertel, Klaus Meerholz, Martin Koch, Florian Gebhard
Publikováno v:
Advanced Functional Materials. 32:2201309
Studying optoelectronic properties in FAPb$_{1-x}$Sn$_x$I$_3$ perovskites as a function of the lead:tin content, Parrott et al. observed the broadest luminescence linewidth and the largest luminescence Stokes shift in mixed compositions with Sn $ < 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::faa4b6ed0cac35c74ee83c6697ffbd2a
https://doi.org/10.1002/adfm.202201309
https://doi.org/10.1002/adfm.202201309
Autor:
Yaroslav Beltukov, Andrei Shumilin, Natalia P. Stepina, Anatolii V. Dvurechenskii, Nadezhda Fainer
Publikováno v:
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis.
The tunneling magnetoresistance of granular SiCxNy: Fe films obtained by deposition from the gas phase is investigated. A model is proposed in which, due to anisotropy and exchange interaction, the magnetoresistance is effectively decoupled from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7660f8aecdb30c177f47a940bd4a8053
https://doi.org/10.29003/m1570.silicon-2020/105-108
https://doi.org/10.29003/m1570.silicon-2020/105-108
Autor:
Anatolii V. Dvurechenskii, Georgii L. Kuryshev, Alexander I. Nikivorov, Ivan A. Ryazantsev, Anatolii P. Kovchavsev, Oleg P. Pchelyakov
Publikováno v:
SPIE Proceedings.
Si(Ge) junction (of p-i-n diode type) containing Ge of self-assembled quantum dots (SAQD). in a ~0,6 μm-thick near-surface layer were investigated. Analysis of photo- and electrophysical performances allowed to revel ~ 10-103 Iph(V) photocurrent gai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f76cf888a6b62fc577571a4969db03be
https://doi.org/10.1117/12.517308
https://doi.org/10.1117/12.517308
Publikováno v:
Uspekhi Fizicheskih Nauk. 171:1371
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d87edd56a75e0470502e64a6d8929b09
https://doi.org/10.3367/ufnr.0171.200112h.1371
https://doi.org/10.3367/ufnr.0171.200112h.1371