Zobrazeno 1 - 10
of 11
pro vyhledávání: '"AM Barklund"'
Publikováno v:
Vacuum. 46:971-975
A true 3D computer program, named DINESE, has been developed to simulate the evolution of real 3D structures during erosion and deposition. It is based on the generalized Huygens reconstruction formalism of surface evolution and can predict the evolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdc3aff33e0c5723427f886686cfcc6e
https://doi.org/10.1016/0042-207x(95)00085-2
https://doi.org/10.1016/0042-207x(95)00085-2
Publikováno v:
Radiation Effects and Defects in Solids. :281-291
Recently we have demonstrated the existence of the so-called sputter yield amplification (SYA) effect, based on the preferential sputtering of the lighter species during ion bombardment of composite solids and resulting in enhanced partial sputtering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4976c6398ac59620d0b08592d7ca98bc
https://doi.org/10.1080/10420159408219790
https://doi.org/10.1080/10420159408219790
Autor:
AM Barklund, Hans-Olof Blom
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:1226-1229
Results from etching experiments where Si3N4 films have been bombarded by argon ions at different angles of incidence, with or without a simultaneous exposure to XeF2 molecules, are presented. The experiments have been performed using a Kaufman‐typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d9c5c090e7b72c37cf79f75f89fbd84
https://doi.org/10.1116/1.578497
https://doi.org/10.1116/1.578497
Publikováno v:
Thin Solid Films. 228:87-90
Bias sputtering is a widely used technique for improving the quality of sputter-deposited thin films. Normally a 50–100 V negative bias voltage is used. Higher bias voltages have been used to produce planarization of patterned substrates during spu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e1779fe855938a48a36738abce9f7fb
https://doi.org/10.1016/0040-6090(93)90570-f
https://doi.org/10.1016/0040-6090(93)90570-f
Publikováno v:
Vacuum. 44:197-201
Recently we have demonstrated the existence of the so-called sputter yield amplification effect, based on the preferential sputtering of a particular species during the ion bombardment of composite solids. This work presents a more elaborate study of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b3e4290012422f290bad758658fc03c
https://doi.org/10.1016/0042-207x(93)90153-2
https://doi.org/10.1016/0042-207x(93)90153-2
Publikováno v:
Surface and Coatings Technology. :131-135
A novel method for enhancing the sputtering yield during ion bombardment of a target is presented. It is based on the introduction of a third species (impurity) in the surface layer which increases the nuclear stopping power of the surface layer and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e0bff71fc9b9c96869729bd88b4c585
https://doi.org/10.1016/s0257-8972(09)90039-1
https://doi.org/10.1016/s0257-8972(09)90039-1
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1592-1596
At first sight one might assume that it is unlikely to influence the sputtering yield of a specific ion/substrate combination by any external means. However, we have found that such an influence may well be introduced. The sputtering yield is predomi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90c5ed715c07e218f59431411a2c42ba
https://doi.org/10.1116/1.578049
https://doi.org/10.1116/1.578049
Publikováno v:
Journal of The Electrochemical Society. 137:1587-1591
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b400e865561030eac2e62caea103861
https://doi.org/10.1149/1.2086732
https://doi.org/10.1149/1.2086732
Publikováno v:
Vacuum. 41:899-901
A very high rate dry etching system based on the plasma jet principle has recently been presented. With this device it is possible to create high concentrations of reactive species. This is done by passing the active gases through a hollow cathode di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b49e5d9268325dffa410477fc26bd3ae
https://doi.org/10.1016/0042-207x(90)93816-2
https://doi.org/10.1016/0042-207x(90)93816-2
Publikováno v:
Vacuum. 41:1074-1076
High bias sputtering in inert argon may be used to selectively deposit thin films on patterned substrates. Simultaneous sputter etching and film deposition will, at the initial stage of film formation, cause a newly discovered interface phenomena. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d7b693fb4b6d99f55726feb9be266ee
https://doi.org/10.1016/0042-207x(90)93871-f
https://doi.org/10.1016/0042-207x(90)93871-f