Zobrazeno 1 - 5
of 5
pro vyhledávání: '"ALOK KUSHWAHA"'
Autor:
Bobbie E. Lewis Baida, Mathias Baumert, Alok Kushwaha, Alyce M. Swinbourne, Stephan T. Leu, William H. E. J. van Wettere
Publikováno v:
Animal Biotelemetry, Vol 10, Iss 1, Pp 1-11 (2022)
Abstract Remote-sensing technology facilitates longitudinal collection of body temperature during periods of hot or cold environmental stress without human interference, producing high-frequency measurements whilst reducing labour and stress to the a
Externí odkaz:
https://doaj.org/article/20af6e0187f441d1b1f48e0284e79563
Autor:
ALOK KUSHWAHA, D.N. SHUKLA
Various physico–chemical parameters were studied to assess the water quality of Ganga river water at Mirzapur in the year 2017. Subsequently, using this physico–chemical parameters, water quality index (WQI) was calculated through mathematical ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::178bf9fb8c3dab56d857b3f055ca431f
Publikováno v:
AIP Conference Proceedings.
This study includes a seasonal analysis of sediment contamination of the River Gandak by heavy metals. It passes through the many small, medium and big cities of Uttar Pradesh and Bihar in Indian Territory. To explore the geochemical condition of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60ea1e99d801fec8b12ac7c26dc4e9b7
https://doi.org/10.1063/1.5032000
https://doi.org/10.1063/1.5032000
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 7:110-119
A new two-dimensional analytical model for dual-material double-gate fully-depleted SOI MOSFET with Pearson-Ⅳ type Doping Distribution is presented. An investigation of electrical MOSFET parameters i.e. drain current, transconductance, channel resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2992bfcf72fea9de6d577703173f546b
https://doi.org/10.5573/jsts.2007.7.2.110
https://doi.org/10.5573/jsts.2007.7.2.110
Publikováno v:
Microwave and Optical Technology Letters. 49:979-986
A new two-dimensional model for dual material double gate fully depleted SOI MOSFET is presented. An investigation of potential distribution in the silicon film is carried out with Pearson-IV type doping distribution as it is essential to establish p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::065521ed5d5ee1df1f2b4ce1ec9ea18c
https://doi.org/10.1002/mop.22319
https://doi.org/10.1002/mop.22319