Zobrazeno 1 - 5
of 5
pro vyhledávání: '"AJ Pidduck"'
Publikováno v:
Vacuum. 45:519-524
Reactive Ion Etching (RIE) during semiconductor device fabrication can cause surface and near-surface damage or contamination which may degrade electrical performance. We have investigated methods of removing this damage and contamination prior to fu
Autor:
A.D. Johnson, R. Jefferies, T. Ashley, J W Cairns, G J Pryce, AJ Pidduck, A B J Smout, C.T. Elliott
Publikováno v:
MRS Proceedings. 484
The application of non-equilibrium transport techniques to Molecular Beam Epitaxy (MBE) grown InSb/InAlSb heterostructure diodes has produced practical devices such as midinfrared LED's and negative luminescent sources that operate at room temperatur
Publikováno v:
Physical review letters. 75(12)
The present work examines ordered surface ripple arrays exhibited by continuous epitaxial InGaAs on GaAs and, for the first time, demonstrates directly that ripple trough locations are sources for misfit defects at the heteroepitaxial interface. Defe
Autor:
Pirrie D; Helford Geoscience LLP, Trelowarren Mill Barn, Mawgan, Helston, Cornwall, TR12 6AE, UK; School of Applied Sciences, Faculty of Computing, Engineering and Sciences, University of South Wales, Glyntaf, Pontypridd, CF37 4AT, UK. Electronic address: duncan.pirrie@southwales.ac.uk., Pidduck AJ; AWE Plc, Aldermaston, Reading, RG7 4PR, UK., Crean DE; AWE Plc, Aldermaston, Reading, RG7 4PR, UK., Nicholls TM; AWE Plc, Aldermaston, Reading, RG7 4PR, UK., Awbery RP; AWE Plc, Aldermaston, Reading, RG7 4PR, UK.
Publikováno v:
Forensic science international [Forensic Sci Int] 2019 Dec; Vol. 305, pp. 109974. Date of Electronic Publication: 2019 Oct 01.
Publikováno v:
Physical review letters [Phys Rev Lett] 1995 Sep 18; Vol. 75 (12), pp. 2368-2371.