Zobrazeno 1 - 10
of 14
pro vyhledávání: '"AJ Pidduck"'
Publikováno v:
Vacuum. 45:519-524
Reactive Ion Etching (RIE) during semiconductor device fabrication can cause surface and near-surface damage or contamination which may degrade electrical performance. We have investigated methods of removing this damage and contamination prior to fu
Autor:
A.D. Johnson, R. Jefferies, T. Ashley, J W Cairns, G J Pryce, AJ Pidduck, A B J Smout, C.T. Elliott
Publikováno v:
MRS Proceedings. 484
The application of non-equilibrium transport techniques to Molecular Beam Epitaxy (MBE) grown InSb/InAlSb heterostructure diodes has produced practical devices such as midinfrared LED's and negative luminescent sources that operate at room temperatur
Publikováno v:
Physical review letters. 75(12)
The present work examines ordered surface ripple arrays exhibited by continuous epitaxial InGaAs on GaAs and, for the first time, demonstrates directly that ripple trough locations are sources for misfit defects at the heteroepitaxial interface. Defe
Publikováno v:
MRS Online Proceedings Library; 2000, Vol. 648 Issue 1, p1-6, 6p
Publikováno v:
ESSDERC '92: 22nd European Solid State Device Research conference; 1992, pxv-xxxvii, 23p
Carbon filament, vapor grown carbon fibers and carbon nanotubes have been discovered to have remarkable properties, opening they way for their use in intriguing and novel applications in electronics, chemistry and materials science. There are many si
Nanostructures and Quantum Effects documents the most recent developments in the field of quantum effects in semiconductor nanostructures such as quantum wires and boxes. Interrelated topics such as quantum interference, low-dimensional electron tran
Autor:
Alexei A. Maradudin
All real surfaces, both those occurring naturally, and those fabricated artificially and with great care, are rough to some degree. It is therefore of interest, and often of importance, to know the extent to which this roughness affects physical p- c
GADEST'99Proceedings of GADEST 99