Zobrazeno 1 - 10
of 20
pro vyhledávání: '"AF. Meftah"'
Publikováno v:
Revue des Énergies Renouvelables, Vol 11, Iss 4, Pp 603-610 (2008)
Solar cells exposed to irradiation undergo severe degradation in their performance due to induced structural defects. To predict this effect, the current-voltage characteristics under AM0 illumination for a constant dose of electron irradiation are n
Externí odkaz:
https://doaj.org/article/21698d728be646c0af3f0150e519f103
Publikováno v:
Transactions on Electrical and Electronic Materials. 20:494-512
This paper is concerned with the numerical modelling of a micromorph silicon tandem solar cell (a-Si:H/µc-Si:H), under series (two-terminal: 2T) and independent (four-terminal: 4T) electrical connection. The study is performed using the simulation s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeb54567dff9edf414ca51640bcbaf59
https://doi.org/10.1007/s42341-019-00136-4
https://doi.org/10.1007/s42341-019-00136-4
Publikováno v:
Vacuum. 120:59-67
Thin Film Transistors based on amorphous Indium–Gallium–Zinc-Oxide (a-IGZO TFT) are receiving a great deal of attention for their numerous applications as alternatives for amorphous and poly-crystalline Silicon based TFTs. A major concern about a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6989d63e177f9b15c919599a87b985f
https://doi.org/10.1016/j.vacuum.2015.04.021
https://doi.org/10.1016/j.vacuum.2015.04.021
Publikováno v:
Materials Science in Semiconductor Processing. 24:34-39
We report on a numerical simulation of the response of substrate traps to a voltage applied to the gate of a gallium arsenide field effect transistor (GaAs FET) using proprietary simulation software. The substrate is assumed to contain shallow accept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b738bf19cf2267750d57c899bcbf1941
https://doi.org/10.1016/j.mssp.2014.03.007
https://doi.org/10.1016/j.mssp.2014.03.007
Publikováno v:
Materials Research Express. 6:075904
Amorphous indium gallium zinc oxide (a-IGZO) are promising for developing thin film transistors (TFTs) because of their large electron mobility, small threshold voltage (Vth), and low temperature fabrication process. In this study, we have investigat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56f6e278baa7134fdb3a02c27fcb7c08
https://doi.org/10.1088/2053-1591/ab11a5
https://doi.org/10.1088/2053-1591/ab11a5
Publikováno v:
Energy Procedia. 50:139-146
Solar cells, used for space applications, are exposed to energetic particles such as protons and electrons. The energetic particles create defects in the active region of the solar cell and the latter performance can be severely degraded. One of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45274ce5a8797b2bd48325810896ad2c
https://doi.org/10.1016/j.egypro.2014.06.017
https://doi.org/10.1016/j.egypro.2014.06.017
Autor:
Mohsin Aziz, Dler Jameel, Af. Meftah, Noor Al Saqri, Mohamed Henini, Nouredine Sengouga, R. H. Mari, Rami Boumaraf, D. Taylor
Publikováno v:
Superlattices and Microstructures. 65:319-331
The SILVACO-TCAD numerical simulator is used to explain the effect of different types of deep levels on the temperature dependence of the capacitance of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates, namely (3 1 1)A and (2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::064f2b5eb533476d84e737f608cdd0a1
https://doi.org/10.1016/j.spmi.2013.11.019
https://doi.org/10.1016/j.spmi.2013.11.019
Publikováno v:
Superlattices and Microstructures. 58:44-52
In this work we use numerical simulation to make a comparison between the effect of electron and proton irradiation on the current voltage ( J–V ) characteristics of a GaAs based solar cell. This is an extension of a previous work in which we have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e259814c3db7f45bb609da515379ba99
https://doi.org/10.1016/j.spmi.2013.03.005
https://doi.org/10.1016/j.spmi.2013.03.005
Publikováno v:
Sciences & Technologie, Vol 0, Iss 23, Pp 28-33 (2005)
Le présent travail consiste en la simulation numérique de la Photoconductivité en régime Stationnaire (PCS) dans le Silicium Amorphe Hydrogéné (a-Si:H) en prenant pour structure électronique du matériau la distribution énergétique des état
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::989958902957ab24b7883360d922ead3
http://revue.umc.edu.dz/index.php/a/article/view/177
http://revue.umc.edu.dz/index.php/a/article/view/177
Publikováno v:
Vacuum. 75:269-273
The present paper deals with dangling bonds creation in a-Si:H thin films under continuous light illumination with moderate intensity. Taking into account the equilibrium conditions of defect density given by the defect pool model, we propose that hy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ad68e58aec83f83c263d55a54e52b9e
https://doi.org/10.1016/j.vacuum.2004.03.007
https://doi.org/10.1016/j.vacuum.2004.03.007