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pro vyhledávání: '"ABM Harun‐ur Rashid"'
Publikováno v:
IET Circuits, Devices and Systems, Vol 15, Iss 7, Pp 619-629 (2021)
Abstract A memristor‐transistor hybrid ternary content addressable memory (MTCAM) with a memristor‐based ternary memory cell is proposed. New emerging devices like memristors have recently been explored to overcome the limitations of CMOS‐based
Externí odkaz:
https://doaj.org/article/04ddb38e0f774a49a1eb4968200a4ab4
