Zobrazeno 1 - 10
of 748
pro vyhledávání: '"ABE, Takaya"'
Autor:
Abe, Takaya, Shinozaki, Motoya, Matsumura, Kazuma, Aizawa, Takumi, Kumasaka, Takeshi, Ito, Norikazu, Tanaka, Taketoshi, Nakahara, Ken, Otsuka, Tomohiro
GaN is expected to be a key material for next-generation electronics due to its interesting properties. However, the current collapse poses a challenge to the application of GaN FETs to electronic devices. In this study, we investigate the formation
Externí odkaz:
http://arxiv.org/abs/2408.04109
Autor:
Shinozaki, Motoya, Abe, Takaya, Matsumura, Kazuma, Aizawa, Takumi, Kumasaka, Takashi, Otsuka, Tomohiro
Publikováno v:
Physical Review B 110, 035305 (2024)
Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between defects an
Externí odkaz:
http://arxiv.org/abs/2404.11756
Autor:
Matsumura, Kazuma, Abe, Takaya, Kitada, Takahito, Kumasaka, Takeshi, Ito, Norikazu, Tanaka, Taketoshi, Nakahara, Ken, Otsuka, Tomohiro
Publikováno v:
Applied Physics Express 16, 075003 (2023)
Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe decrease of the
Externí odkaz:
http://arxiv.org/abs/2304.06846
Autor:
Yoshino, Yuki, Ogoh, Honami, Iichi, Yudai, Sasaki, Tomohiro, Yoshida, Takahiro, Ichimura, Shiori, Nakayama, Masahiro, Xi, Wu, Fujita, Hiroki, Kikuchi, Megumi, Fang, Zhenzhou, Li, Xingming, Abe, Takaya, Futakuchi, Mitsuru, Nakamura, Yasuhiro, Watanabe, Toshio, Chiba, Natsuko
Publikováno v:
In BBA - Molecular Basis of Disease June 2024 1870(5)
Autor:
Otsuka, Tomohiro, Abe, Takaya, Kitada, Takahito, Ito, Norikazu, Tanaka, Taketoshi, Nakahara, Ken
Publikováno v:
Scientific Reports 10, 15421 (2020)
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum
Externí odkaz:
http://arxiv.org/abs/2002.03297
Akademický článek
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Autor:
Futaki, Sugiko, Horimoto, Ayano, Shimono, Chisei, Norioka, Naoko, Taniguchi, Yukimasa, Hamaoka, Hitomi, Kaneko, Mari, Shigeta, Mayo, Abe, Takaya, Sekiguchi, Kiyotoshi, Kondo, Yoichi
Publikováno v:
In Matrix Biology Plus June 2023 18
Autor:
Nakamichi, Ran, Hishikawa, Akihito, Chikuma, Shunsuke, Yoshimura, Akihiko, Sasaki, Takashi, Hashiguchi, Akinori, Abe, Takaya, Tokuhara, Tomoko, Yoshimoto, Norifumi, Nishimura, Erina Sugita, Hama, Eriko Yoshida, Azegami, Tatsuhiko, Nakayama, Takashin, Hayashi, Kaori, Itoh, Hiroshi
Publikováno v:
In Cell Reports 25 April 2023 42(4)
Autor:
Kobayashi, Hiroaki, Takemoto, Kenji, Sanbo, Makoto, Hirabayashi, Masumi, Hirabayashi, Takahiro, Hirayama, Teruyoshi, Kiyonari, Hiroshi, Abe, Takaya, Yagi, Takeshi
Publikováno v:
In iScience 20 January 2023 26(1)
Akademický článek
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