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Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72c9d1ee669e500d940d963ca3f17e72

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Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene.

Autor: Rigosi AF; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States., Hill HM; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States., Glavin NR; Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, United States., Pookpanratana SJ; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States., Yang Y; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States.; Joint Quantum Institute, University of Maryland, College Park, MD 20742, United States., Boosalis AG; Nanometrics Incorporated, Milpitas, CA 95035., Hu J; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States., Rice A; Sandia National Laboratories, Albuquerque, NM 87185, United States., Allerman AA; Sandia National Laboratories, Albuquerque, NM 87185, United States., Nguyen NV; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States., Hacker CA; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States., Elmquist RE; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States., Hight Walker AR; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States., Newell DB; National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States.

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Intracavity frequency doubling of a diode-pumped external-cavity surface-emitting semiconductor laser.

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