Zobrazeno 1 - 10
of 40
pro vyhledávání: '"A.Z. Kattamis"'
Autor:
James C. Sturm, Sigurd Wagner, Ke Long, Kunigunde H. Cherenack, Jian-Zhang Chen, K. Rajan, B. Hekmatshoar, Mike Hack, A.Z. Kattamis
Publikováno v:
IEEE Electron Device Letters. 29:63-66
We have fabricated active-matrix organic light emitting diode (AMOLED) test arrays on an optically clear high-temperature flexible plastic substrate at process temperatures as high as 285 degC using amorphous silicon thin-film transistors (a-Si TFTs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d792926399f78845f56eb5f9c5bcef96
https://doi.org/10.1109/led.2007.910800
https://doi.org/10.1109/led.2007.910800
Autor:
Shawn M. O'Rourke, James C. Sturm, David R. Allee, Kunigunde H. Cherenack, A.Z. Kattamis, I-Chun Cheng, Sigurd Wagner, Sameer M. Venugopal, Doug Loy, B. Hekmatshoar, Ke Long
Publikováno v:
Journal of Display Technology. 3:304-308
The transition of thin-film transistor (TFT) backplanes from rigid plate glass to flexible substrates requires the development of a generic TFT backplane technology on a clear plastic substrate. To be sufficiently stable under bias stress, amorphous-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e73ef5835eda4db176647b5687d76972
https://doi.org/10.1109/jdt.2007.900935
https://doi.org/10.1109/jdt.2007.900935
Autor:
A.K. Andreopoulou, M. Barbaro, M.J. Beliatis, A. Bonfiglio, B.S. Cook, J.R. Cooper, P. Cosseddu, B.W. D'Andrade, P. Delaporte, M. Demelas, D. Georgiou, S. Grigorian, G. Huebner, K.D.G.I. Jayawardena, J.K. Kallitsis, D. Karnakis, A.Z. Kattamis, S. Kim, C. Koidis, S. Kourkouli, M. Koyuncu, M. Krebs, F.C. Krebs, S. Lai, A. Laskarakis, Y. Leterrier, S. Logothetidis, A. Loi, E. Lorenz, M.F. Mabrook, C.A. Mills, P.F. Murphy, N. Li Pira, R. Rhodes, B. Roth, L.J. Rozanski, P.W. Sayers, S.R.P. Silva, A. Sleiman, R.R. Søndergaard, B. Tehrani, M.M. Tentzeris, G. Volonakis, Z.G. Wu, I. Zergioti, D.A. Zeze, A. Zimmermann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::763b853951f048eaa4478dba6b692099
https://doi.org/10.1016/b978-1-78242-035-4.01002-2
https://doi.org/10.1016/b978-1-78242-035-4.01002-2
Publikováno v:
ECS Transactions. 3:249-253
Thermo-mechanical theory of a device film-on-foil structure reveals that the layer-to-layer alignment accuracy and the radius of curvature of the structure are both controlled by the mismatch strain between the deposited films and the substrate. Amor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::067226d30850a03aa11a47c90177f6f7
https://doi.org/10.1149/1.2356360
https://doi.org/10.1149/1.2356360
Autor:
Helena Gleskova, A.Z. Kattamis, I-Chun Cheng, Ke Long, Marie B. O'Regan, Matthew Stevenson, Gang Yu, James C. Sturm, Sigurd Wagner
Publikováno v:
IEEE Transactions on Electron Devices. 53:1789-1796
An amorphous-silicon thin-film transistor (TFT) process with a 180 degC maximum temperature using plasma-enhanced chemical vapor deposition has been developed on both novel clear polymer and glass substrates. The gate leakage current, threshold volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84fb0767e33598ed0bd11b90d0ad01bb
https://doi.org/10.1109/ted.2006.878028
https://doi.org/10.1109/ted.2006.878028
Publikováno v:
IEEE Electron Device Letters. 28:1004-1006
We have made hydrogenated amorphous-silicon thin-film transistors (TFTs) at a process temperature of 300degC on free-standing clear-plastic foil substrates. The key to the achievement of flat and smooth samples was to design the mechanical stresses i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54a5f63a7d569eac5bd5480b19778c85
https://doi.org/10.1109/led.2007.907411
https://doi.org/10.1109/led.2007.907411
Autor:
Sigurd Wagner, Kunigunde H. Cherenack, James C. Sturm, B. Hekmatshoar, Helena Gleskova, A.Z. Kattamis, I-Chun Cheng
Publikováno v:
IEEE Electron Device Letters. 28:606-608
The stability of thin-film transistors (TFTs) of hydrogenated amorphous-silicon (a-Si:H) against gate-bias stress is improved by raising the deposition power and temperature of the silicon nitride gate dielectric. We studied the effects of power dens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcf54d0196dfd65fab86be72841d9362
https://doi.org/10.1109/led.2007.900078
https://doi.org/10.1109/led.2007.900078
Publikováno v:
IEEE Electron Device Letters. 27:166-168
We fabricated the first bottom-gate amorphous silicon (a-Si:H) thin-film transistors (TFTs) on a clear plastic substrate with source and drain self-aligned to the gate. The top source and drain are self-aligned to the bottom gate by backside exposure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b42a4573befcb3d36da5085740b6575e
https://doi.org/10.1109/led.2006.870247
https://doi.org/10.1109/led.2006.870247
Publikováno v:
IEEE Electron Device Letters. 27:111-113
Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (T/sub g/) of >315/spl deg/ C and low coefficient of thermal expansion of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf97c27feb5529a931ebb2a0d9c01641
https://doi.org/10.1109/led.2005.863147
https://doi.org/10.1109/led.2005.863147
Autor:
Russell J. Holmes, Stephen R. Forrest, Ke Long, Sigurd Wagner, James C. Sturm, A.Z. Kattamis, I-Chun Cheng
Publikováno v:
IEEE Electron Device Letters. 27:49-51
We demonstrate nanocrystalline silicon (nc-Si) top-gate thin-film transistors (TFTs) on optically clear, flexible plastic foil substrates. The silicon layers were deposited by plasma-enhanced chemical vapor deposition at a substrate temperature of 15
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e68258d8480a9f065271ce4e2cf3be8
https://doi.org/10.1109/led.2005.861256
https://doi.org/10.1109/led.2005.861256