Zobrazeno 1 - 10
of 40
pro vyhledávání: '"A.Yu. Gorbatchev"'
Autor:
A. Del Río-De Santiago, I.E. Cortes-Mestizo, A.Yu. Gorbatchev, Máximo López-López, L.I. Espinosa-Vega, C.A. Mercado-Ornelas, Víctor Hugo Méndez-García, E. Eugenio-López
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 95:22-26
Different mechanisms of adatoms nucleation are studied for the self-assembling of InAs quantum dots (QDs) on smooth and nanoscale faceted GaAs surface morphologies. The experiments were performed on GaAs(100) and GaAs(631), and prior to the arrival o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55ffb03eafb7816611b3636aaabd01a3
https://doi.org/10.1016/j.physe.2017.08.013
https://doi.org/10.1016/j.physe.2017.08.013
Autor:
José Manuel Gutiérrez-Hernández, Satoshi Shimomura, L.I. Espinosa-Vega, Víctor Hugo Méndez-García, A.Yu. Gorbatchev, E. Eugenio-López
Publikováno v:
Journal of Crystal Growth. 477:212-216
Quantum dashes were synthesized in the molecular beam epitaxial growth of InAs on GaAs(2 2 1). By changing the arsenic pressure it was possible to obtain highly ordered one-dimensional InAs arrays as demonstrated by autocorrelation function analysis.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c057812b253976f444702afdf16aeb7
https://doi.org/10.1016/j.jcrysgro.2017.04.004
https://doi.org/10.1016/j.jcrysgro.2017.04.004
Autor:
C.A. Mercado-Ornelas, Luis Zamora-Peredo, V.H. Méndez-García, I. Lara-Velázquez, L.I. Espinosa-Vega, D. García-Compean, E. Eugenio-López, C. M. Yee-Rendón, I.E. Cortes-Mestizo, A.Yu. Gorbatchev
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 124:114217
In this study, the quantum dots (QDs) self-assembly properties were affected by strain modulation. The strain of the GaAs (100) surface was modulated prior to the growth of InAs with the aim to tailor the size and distribution of self-assembled QDs.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1245389e5dd77dd76da11d3d12699f9
https://doi.org/10.1016/j.physe.2020.114217
https://doi.org/10.1016/j.physe.2020.114217
Autor:
Satoshi Shimomura, E. Cruz-Hernández, V.H. Méndez-García, D. Vázquez-Cortes, A.Yu. Gorbatchev
Publikováno v:
Journal of Crystal Growth. 425:85-88
The effects of doping with silicon (Si) AlGaAs layers grown by molecular beam epitaxy on GaAs (6 3 1)-oriented substrates as a function of the arsenic pressure ( P As ) is presented and compared with layers grown on (1 0 0) oriented substrates. The s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55b76611bda66e2e7e9e95ff167e1453
https://doi.org/10.1016/j.jcrysgro.2015.03.022
https://doi.org/10.1016/j.jcrysgro.2015.03.022
Autor:
A.Yu. Gorbatchev, Y. L. Casallas-Moreno, I. Martínez-Velis, A. Del Río-De Santiago, Máximo López-López, Víctor Hugo Méndez-García, E. Cruz-Hernández, E. López-Luna
Publikováno v:
Applied Surface Science. 333:92-95
In the present work, we report on molecular beam epitaxy growth of Mn-doped GaAs films at the relatively high temperature (HT) of 530 °C. We found that by increasing the Mn atomic percent, Mn%, from 0.01 to 0.2, the surface morphology of the samples
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e88af315c0bc2135dc27dad46ee5df6
https://doi.org/10.1016/j.apsusc.2015.01.228
https://doi.org/10.1016/j.apsusc.2015.01.228
Autor:
E. Cruz-Hernández, V.H. Méndez-García, P.G. Mani-Gonzalez, A.Yu. Gorbatchev, Alberto Herrera-Gomez, M. Pérez-Caro, M. Ramírez-López, Máximo López-López
Publikováno v:
Journal of Crystal Growth. 378:295-298
In this letter, we report on the study of the pseudo-(1×1) surface by reflection high-energy electron diffraction in the InGaN grown on GaN/sapphire substrate by plasma-assisted molecular beam epitaxy. At the end of the InGaN layer growth at 500 °C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e307d06caa20a9fcbfbf3719b881d5f
https://doi.org/10.1016/j.jcrysgro.2012.12.172
https://doi.org/10.1016/j.jcrysgro.2012.12.172
Autor:
M. Ramírez-López, Máximo López-López, Víctor Hugo Méndez-García, J. S. Rojas-Ramírez, Luis Zamora-Peredo, A.Yu. Gorbatchev, G. Garcia-Linan, I. Martínez-Velis, J. Hernández-Rosas, R. Contreras-Guerrero
Publikováno v:
physica status solidi (a). 206:836-841
The molecular beam epitaxial (MBE) growth of InAs nanostructures on GaAs(631)-oriented substrates is studied by photoluminescence (PL) and photoreflectance spectroscopy (PR). First, a corrugated surface conformed by regularly spaced grooves aligned a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce86d59dff0ca41fbfc49629335077ef
https://doi.org/10.1002/pssa.200881412
https://doi.org/10.1002/pssa.200881412
Autor:
A.Yu. Gorbatchev, V. A. Elyukhin, T. Prutskij, C. Pelosi, V.A. Mishurnyi, F.E. Ortiz Vazquez, Yu. Kudriavtsev, C. Bocchi, F. de Anda, B.Y. Ber
Publikováno v:
Thin Solid Films. 516:8092-8095
It has been shown that the segregation coefficients in III–V ternary systems depend on substrate orientation. This effect was observed, in particular, in the system GaInP grown on GaAs substrates by LPE. All articles studying this effect were based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d22c3480c1f1f6482ce9e954b66f110f
https://doi.org/10.1016/j.tsf.2008.04.018
https://doi.org/10.1016/j.tsf.2008.04.018
Autor:
Carlos Soubervielle-Montalvo, I.C. Hernandez, Luis Zamora-Peredo, A.Yu. Gorbatchev, V.H. Méndez-García, Ángel Rodríguez, F. de Anda, M. Sheldon
Publikováno v:
Journal of Crystal Growth. :84-87
The optical properties of Be-doped Al 0.2 Ga 0.3 In 0.5 P layers grown on GaAs by solid source molecular beam epitaxy have been studied. In particular, we investigated a set of heavy doped samples grown at different phosphorous cracking temperatures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dfc33cfd328524c1a76859f2955624a
https://doi.org/10.1016/j.jcrysgro.2006.11.293
https://doi.org/10.1016/j.jcrysgro.2006.11.293
Autor:
V.A. Mishurnyi, V.H. Méndez-García, Rene Asomoza, A.Yu. Gorbatchev, Yu. Kudriavtsev, M. del P. Rodríguez-Torres, F. de Anda, I.C. Hernandez
Publikováno v:
Journal of Crystal Growth. 277:138-142
A study of the ‘‘composition-pulling or lattice-latching’’ effect has been done for the case of GaInP epitaxial layers grown on GaAs and GaInAs substrates. The layers were grown simultaneously on two different substrates placed side by side u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fea854d53278c38efdddbfb979600ae
https://doi.org/10.1016/j.jcrysgro.2005.01.092
https://doi.org/10.1016/j.jcrysgro.2005.01.092