Zobrazeno 1 - 10
of 30
pro vyhledávání: '"A.W. Morse"'
Autor:
G. Augustine, J.D. Oliver, P.M. Esker, R.C. Brooks, R.R. Barron, H. G. Henry, Rowland C. Clarke, A.W. Morse, B.W. Veasel, G. C. DeSalvo
Publikováno v:
IEEE Transactions on Electron Devices. 51:839-845
Previous efforts have revealed instabilities in standard SiC MESFET device electrical characteristics, which have been attributed to charged surface states. This work describes the use of an undoped "spacer" layer on top of a SiC MESFET to form a "bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc3bf2deef015d497bf018d55a48fa3b
https://doi.org/10.1109/ted.2004.828279
https://doi.org/10.1109/ted.2004.828279
Autor:
W. J. Malkowski, B.A. Morick, J. R. Gigante, K.J. Petrosky, A.W. Morse, R.R. Barron, G. C. DeSalvo, Rowland C. Clarke, W.R. Curtice, T.J. Knight, J.A. Ostop
Publikováno v:
60th DRC. Conference Digest Device Research Conference.
The Static Induction Transistor (SIT) has proven itself as an appropriate device to take full advantage of the high breakdown field strength, thermal conductivity, and electron velocity characteristics of silicon carbide. Microwave SITs using metal S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f9d1c9cce6e737928ea8f14c6cc552b
https://doi.org/10.1109/drc.2002.1029586
https://doi.org/10.1109/drc.2002.1029586
Autor:
A.K. Agarwal, G. Augustine, V. Balakrishna, C.D. Brandt, A.A. Burk, null Li-Shu Chen, R.C. Clarke, P.M. Esker, H.M. Hobgood, R.H. Hopkins, A.W. Morse, L.B. Rowland, S. Seshadri, R.R. Siergiej, T.J. Smith, S. Sriram
Publikováno v:
International Electron Devices Meeting. Technical Digest.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86952549f18d334d82e879543045de20
https://doi.org/10.1109/iedm.1996.553573
https://doi.org/10.1109/iedm.1996.553573
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
Silicon carbide (SiC) is an emerging semiconductor material which has been widely predicted to allow greatly improved transistor performance over common semiconductors such as silicon and gallium arsenide. This paper describes the characteristics of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a54b3121bd4568546dd9e21e33699812
https://doi.org/10.1109/mwsym.1996.511030
https://doi.org/10.1109/mwsym.1996.511030
Autor:
P.M. Esker, G.W. Eldridge, J.A. Ostop, C.D. Brandt, Rowland C. Clarke, A.W. Morse, B. Barron, Richard Bojko, R.R. Siergiej, L.-S. Chen
Publikováno v:
56th Annual Device Research Conference Digest (Cat. No.98TH8373).
For the first time, 4H-SiC static induction transistors (SITs) have demonstrated 400 W pulsed L-band (1.3 GHz) performance (16.7 W/cm source periphery). Additionally, air-bridged parts have shown 78 W pulsed S-band (2.9 GHz) performance (15.1 W/cm so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04c2ba9e47456b5351dd82cc263a5619
https://doi.org/10.1109/drc.1998.731137
https://doi.org/10.1109/drc.1998.731137
Autor:
A.A. Burk, L.-S. Chen, Rowland C. Clarke, S. Sriram, V. Balakrishna, A.W. Morse, R.R. Siergiej, C.D. Brandt, A.K. Agarwal
Publikováno v:
1998 High-Temperature Electronic Materials, Devices and Sensors Conference (Cat. No.98EX132).
Silicon carbide (SiC) is an emerging semiconductor which has proven to be well suited to high temperature power switching and high-frequency power generation. This paper examines recent advances in materials development and device performance. In bou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16759941a41af582864d7f086d0cc95c
https://doi.org/10.1109/htemds.1998.730637
https://doi.org/10.1109/htemds.1998.730637
Autor:
C.D. Brandt, J.J. Hawkins, A.W. Morse, R.R. Barron, J.A. Ostop, T.J. Smith, S. Sriram, P.M. Esker, Rowland C. Clarke, R.R. Siergiej, C.D. Davis, L.-S. Chen
Publikováno v:
1997 IEEE MTT-S International Microwave Symposium Digest.
Silicon carbide is emerging semiconductor material which is now proven to be especially well suited for high power, high frequency applications. Recent results verify the superiority of silicon carbide over both silicon or gallium arsenide for fabric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8004aff2e52bddf7d6fe37c025e1c0f3
https://doi.org/10.1109/mwsym.1997.604519
https://doi.org/10.1109/mwsym.1997.604519
Autor:
P.M. Esker, R.R. Siergiej, A.W. Morse, Richard Bojko, T.J. Smith, Rowland C. Clarke, L.B. Rowland
Publikováno v:
1997 55th Annual Device Research Conference Digest.
For the first time, high gain 4H-SiC static induction transistors (SITs) have been fabricated using a sub-micron source airbridging technique. These devices exhibit record 15 dB small signal gain at 3 GHz. This represents the highest gain yet reporte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20841c3d89df6f70d51d31d88200892f
https://doi.org/10.1109/drc.1997.612502
https://doi.org/10.1109/drc.1997.612502
Autor:
R.R. Barron, R.H. Hopkins, G. Augustine, A.A. Burk, S. Sriram, M.C. Driver, R.C. Glass, C.D. Brandt, T.J. Smith, Rowland C. Clarke, R.R. Siergiej, H.M. Hobgood, P.A. Orphanos, A.W. Morse
Publikováno v:
1995 53rd Annual Device Research Conference Digest.
Summary form only given. SiC MESFETs are very promising candidates for RF power amplification, due to their unique combination of high saturation velocity, high breakdown strength, and high thermal conductivity. In the present work, we demonstrate fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad8642bd574048a37d0dcf82b359b913
https://doi.org/10.1109/drc.1995.496290
https://doi.org/10.1109/drc.1995.496290
Autor:
R.R. Siergiej, A.W. Morse, Rowland C. Clarke, A.K. Aganval, A.A. Burk, C.D. Brandt, P.A. Orphanos
Publikováno v:
Proceedings of International Electron Devices Meeting.
Static induction transistors have been demonstrated in 4H-SiC. SiC specific semiconductor processing technologies such as epitaxy, reactive ion etching, and sidewall Schottky gates were employed. Under pulsed power test conditions, 4H-SiC SITs develo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff374100729d064731578741c10e4867
https://doi.org/10.1109/iedm.1995.499213
https://doi.org/10.1109/iedm.1995.499213