Zobrazeno 1 - 10
of 132
pro vyhledávání: '"A.V. Sachenko"'
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 2, Pp 155-159 (2020)
The method for estimating the loss of luminescent quanta caused by reabsorption has been proposed. The method is based on the analysis of absorption and luminescence spectra of quantum dots (QDs) with different radii and dispersion of radius . The lo
Externí odkaz:
https://doaj.org/article/e837f0d207ab46e29fa65b9f8c6dc504
Autor:
A.V. Sachenko
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 22, Iss 3, Pp 277-284 (2019)
The key parameters of silicon solar cells with back contact and rear metallization (SC-BC), such as the short-circuit current, open-circuit voltage, and photoconversion efficiency are modeled theoretically. Among other recombination channels, the mod
Externí odkaz:
https://doaj.org/article/f05f3b5bf8c14806b514d103914dc3ea
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 1, Pp 5-40 (2018)
This review is devoted to presentation and analysis of physical mechanisms of ohmic contacts formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmic contacts researched for the
Externí odkaz:
https://doaj.org/article/e20d9c3f7741464ab9a9573664b43fa1
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 1, Pp 58-64 (2018)
We have investigated the influence of the average radius and its dispersion of the semiconductor quantum dots (QDs) used in luminescent solar concentrators (LSCs) on reabsorption. To minimize the detrimental reabsorption losses in LSCs, six semicondu
Externí odkaz:
https://doaj.org/article/c169811be05e4ce0b6ed907902e54083
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 20, Iss 4, Pp 475-480 (2017)
Kinetics and temperature dependence of photoconductivity were measured in macroporous silicon at 80…300 K after light illumination with the wavelength 0.9 μm. The influence of mechanisms of the charge carrier transport through the macropore surfac
Externí odkaz:
https://doaj.org/article/7448d74527bb4d6fae33e541d5576841
Autor:
A.V. Sachenko, V.P. Kostylyov, V.M. Vlasiuk, R.M. Korkishko, I.O. Sokolovskyi, V.V. Chernenko, M.A. Evstigneev
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 20, Iss 1, Pp 34-40 (2017)
The influence of non-radiative exciton recombination (NRER) on the photoconversion efficiency in silicon solar cells with short Shockley–Read–Hall lifetimes τSRH has been studied. It has been shown that the efficiency reduction due to this effec
Externí odkaz:
https://doaj.org/article/db25b995b5c04741ba0f7b6fce6d6528
Autor:
A.V. Sachenko
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 19, Iss 1, Pp 67-74 (2016)
The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley–Read–Hall recombination in the silicon bulk
Externí odkaz:
https://doaj.org/article/a98a595eec37482e8e43115d6bfd040c
Akademický článek
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Autor:
A.V. Sachenko
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 19:334-342
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12bc534c7416d2f80ddf61ea9e9b093c
https://doi.org/10.15407/spqeo19.04.334
https://doi.org/10.15407/spqeo19.04.334
Akademický článek
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