Zobrazeno 1 - 10
of 25
pro vyhledávání: '"A.V. Duvanskii"'
Publikováno v:
physica status solidi (a). 218:2100181
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af760f1a58df3f1fe33de81a25442714
https://doi.org/10.1002/pssa.202100181
https://doi.org/10.1002/pssa.202100181
Publikováno v:
Solid State Phenomena. 242:285-289
The FTIR absorption studies of boron-doped silicon irradiated at 80 K by 5 MeV electrons have shown the recombination-enhanced migration of the interstitial boron by the Bourgoin-Corbett mechanism. The interaction of diffusing atoms of Bi with one an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c21a07654d1a5e61b72507af66afdc74
https://doi.org/10.4028/www.scientific.net/ssp.242.285
https://doi.org/10.4028/www.scientific.net/ssp.242.285
Publikováno v:
Physical Review B. 94
Interstitial boron-related defects in silicon subjected to irradiation with 5 MeV electrons at a temperature of 80 K are investigated by Fourier-transform infrared absorption spectroscopy. This study demonstrates the radiation-enhanced annealing of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81deb2f6b996e63389082b3e648c5bb8
https://doi.org/10.1103/physrevb.94.235210
https://doi.org/10.1103/physrevb.94.235210
Publikováno v:
physica status solidi (a). 216:1900291
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64b7b8c761546bf4d1eaaf61f624f78d
https://doi.org/10.1002/pssa.201900291
https://doi.org/10.1002/pssa.201900291
Publikováno v:
Solid State Phenomena. :178-182
In silicon with high oxygen and boron content a new absorption band situated near 1026 cm-1 was found in Si after light illuminSuperscript textation with intensity of 70 mW/cm2. It was shown that both oxygen and boron are the component of the defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22c398e3afbb2481cd2f7869c00f80ce
https://doi.org/10.4028/www.scientific.net/ssp.178-179.178
https://doi.org/10.4028/www.scientific.net/ssp.178-179.178
Autor:
Yu.V. Pomozov, M. G. Sosnin, A.V. Duvanskii, N. V. Abrosimov, H. Riemann, Lyudmila I. Khirunenko
Publikováno v:
Semiconductors. 44:1253-1257
The effect of doping with tin on the ν3 vibrational mode of oxygen in Ge has been studied. The appearance of three new series of absorption lines besides the ν3 oxygen vibration spectra was found. The spectrum structure in each series of lines foun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb23c3750898a105b42bb8271c27466
https://doi.org/10.1134/s1063782610100015
https://doi.org/10.1134/s1063782610100015
Publikováno v:
Journal of Applied Physics. 123:161595
A new absorption spectrum has been detected in the region of 770–805 cm−1 following the annealing of low temperature irradiated Sn-doped Ge. The spectrum develops simultaneously with the disappearance of the V2-related absorption band. The new sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ad95934dda2a358e55350a429d93a20
https://doi.org/10.1063/1.5010422
https://doi.org/10.1063/1.5010422
Autor:
Yu.V. Pomozov, Helge Riemann, Lyudmila I. Khirunenko, Nikolay V. Abrosimov, M. G. Sosnin, A.V. Duvanskii, S.K. Golyk
Publikováno v:
Solid State Phenomena. :181-186
The measurements of stress induced dichroism on oxygen absorption band near 1107 cm-1 in Si1-xGex compounds and subsequent kinetics of the dichroism recovery upon isothermal annealing have been carried out. It has been found that the magnitude of int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e00e1285a20f0721bd789c81e423eb4
https://doi.org/10.4028/www.scientific.net/ssp.156-158.181
https://doi.org/10.4028/www.scientific.net/ssp.156-158.181
Autor:
Vitor J.B. Torres, Patrick R. Briddon, José Coutinho, L.I. Khirunenko, Yu.V. Pomozov, Nikolay V. Abrosimov, A.V. Duvanskii, Helge Riemann, M.G. Sosnin, Roy W. Jones
Publikováno v:
Solid State Phenomena. :59-64
The interstitial carbon impurity (CI) vibrational modes in monocrystalline Si-rich SiGe were investigated by Fourier Transform Infra Red spectroscopy and density functional modelling. The two absorption bands of CI are found to be close to those in s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::661342c3529643bf744b41f418b3f34e
https://doi.org/10.4028/www.scientific.net/ssp.131-133.59
https://doi.org/10.4028/www.scientific.net/ssp.131-133.59
Autor:
Nickolay Abrosimov, Anthony R. Peaker, M. G. Sosnin, Yu.V. Pomozov, Helge Riemann, A.V. Duvanskii, M.O. Trypachko, Vladimir P. Markevich, L.I. Murin, Lyudmila I. Khirunenko, S. B. Lastovskii
Publikováno v:
Materials Science in Semiconductor Processing. 9:525-530
In the present work, V2-related defects have been studied in SiGe alloys by means of infrared (IR) absorption spectroscopy, electron paramagnetic resonance (EPR) and deep-level transient spectroscopy (DLTS). The defects have been induced by electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ddd63e234384325516b5678af331cd1
https://doi.org/10.1016/j.mssp.2006.08.030
https://doi.org/10.1016/j.mssp.2006.08.030