Zobrazeno 1 - 10
of 31
pro vyhledávání: '"A.T.A. Zegers-van Duijnhoven"'
Autor:
R.J. Havens, V. C. Venezia, L.F. Tiemeijer, A.J. Scholten, A.T.A. Zegers-van Duijnhoven, R. van Langevelde
Publikováno v:
IEEE Transactions on Electron Devices. 50:618-632
The RF noise in 0.18-/spl mu/m CMOS technology has been measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the drain current noise for short-channel MOSFETs. The gate current noise on the other hand is more
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d5252e92915d6c77a78c85b042cd326
https://doi.org/10.1109/ted.2003.810480
https://doi.org/10.1109/ted.2003.810480
Autor:
M.J. Knitel, L.F. Tiemeijer, R. van Langevelde, A.J. Scholten, D.B.M. Klaassen, A.T.A. Zegers-van Duijnhoven, Pierre H. Woerlee
Publikováno v:
IEEE Transactions on Electron Devices. 48:1776-1782
The impact of scaling on the analog performance of MOS devices at RF frequencies was studied. Trends in the RF performance of nominal gate length NMOS devices from 350-nm to 50-nm CMOS technologies are presented. Both experimental data and circuit si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::206cbe023b32a5b6709f178d039c2aff
https://doi.org/10.1109/16.936707
https://doi.org/10.1109/16.936707
Publikováno v:
Solid-State Electronics. 42:803-808
We scrutinize the variation of the exponent of flicker noise in MOSFETs under thoroughly stabilized conditions. We find that the exponent of 1/ f − γ noise varies nonsystematically with the electric properties of the transistors. Stochastic fluctu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3f8adf17f1364870dca13cd5c4eb33b
https://doi.org/10.1016/s0038-1101(98)00090-2
https://doi.org/10.1016/s0038-1101(98)00090-2
Publikováno v:
Microelectronics Reliability. 38:259-264
The reaction-diffusion (i.e. the linear-parabolic) mechanism, widely in use for modeling the thermal oxidation of silicon, can be rebutted on the following issues: •There is a poor fit of the linear-parabolic law or of its derivative X 2 +AX=B(t+τ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed78a1feb54ecd0f1c03cb654ae8aed7
https://doi.org/10.1016/s0026-2714(97)00041-3
https://doi.org/10.1016/s0026-2714(97)00041-3
Publikováno v:
Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences. 354:2327-2350
The conduction of electrons through ultra-thin insulators is accurately described by the Fowler-Nordheim mechanism. Electrons tunnel through the energy barrier at the cathode interface to the conduction band of the insulator and drift to the anode. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb03b10ce2c213a4c66c2c979e507ca
https://doi.org/10.1098/rsta.1996.0103
https://doi.org/10.1098/rsta.1996.0103
Publikováno v:
Microelectronic Engineering. 28:167-170
1f noise measurements of n and p MOSFETs are presented in a masterplot. These plots of spectral density of power fluctuations, Sp, versus total power per charge, PQ, can compare large families of different noise sources[1]. The way of plotting origin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::088cce92ebc8b3b574574e18263719ee
https://doi.org/10.1016/0167-9317(95)00037-9
https://doi.org/10.1016/0167-9317(95)00037-9
Publikováno v:
Microelectronics Journal. 24:333-346
Thermal oxidation of silicon is described in terms of the ionic transport of oxygen species. The growth depends on the diffusion of oxygen ions which create a counter-field in the oxide. A mechanism of field disproportionation causes high counter-fie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b8ccc351fd054d6e7f56a3b00d4fb1f
https://doi.org/10.1016/0026-2692(93)90036-e
https://doi.org/10.1016/0026-2692(93)90036-e
Autor:
W. Jeamsaksiri, L.F. Tiemeijer, R.M.D.A. Velghe, Andries J. Scholten, D.B.M. Klaassen, A.T.A. Zegers-van Duijnhoven, R. de Kort, R. van Langevelde, R.J. Havens
Publikováno v:
AIP Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edbc5b5841a65879c324bfa4c3122da0
https://doi.org/10.1063/1.2036855
https://doi.org/10.1063/1.2036855
Publikováno v:
Proceedings of 1994 IEEE International Electron Devices Meeting.
1/f noise measurements of n and p MOSFETs and interconnects are presented in a masterplot. This plot of noise power density, S/sub p/ versus power per charge, P/Q can compare large families of different noise sources. The masterplot comes from our ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d406c1dab59c0e8c8cecd02a7e1c9eee
https://doi.org/10.1109/iedm.1994.383436
https://doi.org/10.1109/iedm.1994.383436
Autor:
Jeroen Croon, E. Augendre, F.R.J. Huisman, R.M.D.A. Velghe, K.N. Sreerambhatla, Youri Victorovitch Ponomarev, L.P. Bellefroid, M.N. Webster, M. Da Rold, E. Seevinck, Ray Duffy, M.J.B. Bolt, R.F.M. Roes, A.T.A. Zegers-van Duijnhoven, R. Surdeanu, M. Vertregt, Hans Tuinhout, A.J. Moonen, Peter Stolk, N.K.J. van Winkelhoff, C.J.J. Dachs
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
This paper studies the suitability of CMOS device technology for mixed-signal applications. The currently proposed scaling scenario's for CMOS technologies lead to strong degradation of analog transistor performance. As a result the combined optimiza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f377a49c742ede27965176cd3b9e48c
https://doi.org/10.1109/iedm.2001.979469
https://doi.org/10.1109/iedm.2001.979469