Zobrazeno 1 - 10
of 72
pro vyhledávání: '"A.T. Blumenau"'
Publikováno v:
Solid State Phenomena. :259-264
Recently, the interaction of copper with dislocations in p-type Si/SiGe/Si structures has been investigated experimentally and a new dislocation related DLTS-level at Ev +0.32 eV was detected after intentional contamination with copper. To determine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d6527665e328759f9998888333790e0
https://doi.org/10.4028/www.scientific.net/ssp.131-133.259
https://doi.org/10.4028/www.scientific.net/ssp.131-133.259
Publikováno v:
physica status solidi c. 4:2945-2949
First-principle calculations have shown that both the partials can be electrically active. In particular we have shown the Ga(g) core partials are a good candidate for the observed absorption peak at 2.4 eV revealed by energy loss spectroscopy measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::497f520abcb2b3aab208eeed8c18f48f
https://doi.org/10.1002/pssc.200675482
https://doi.org/10.1002/pssc.200675482
Publikováno v:
physica status solidi c. 4:2923-2928
SiC bipolar devices show a degradation under forward-biased operation due to the formation and rapid propagation of stacking faults in the active region of the device. It is believed that the observed rapid stacking fault growth is due to a recombina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9322f8a383ebc4e1f2211e155d0bc01f
https://doi.org/10.1002/pssc.200775437
https://doi.org/10.1002/pssc.200775437
Publikováno v:
physica status solidi (a). 204:2211-2215
Dislocations are common defects in both natural as well as in CVD-grown diamond. Recent advances in the growth of high quality single crystal CVD diamond have led to an increased interest in the atomistic and electronic structure of (100) dislocation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::339dde35eb8e3bcfa2ad4da772c9bcbd
https://doi.org/10.1002/pssa.200675444
https://doi.org/10.1002/pssa.200675444
Publikováno v:
Materials Science Forum. :321-326
Under forward bias bipolar 4H- and 6H-SiC devices are known to degrade rapidly through stacking fault formation and expansion in the basal plane. It is believed that the ob- served rapid stacking fault growth is due to a recombination-enhanced disloc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e686dcf3fe15e22e96aba3b81c9b64f
https://doi.org/10.4028/www.scientific.net/msf.527-529.321
https://doi.org/10.4028/www.scientific.net/msf.527-529.321
Publikováno v:
physica status solidi (a). 203:3070-3075
Dislocations are common defects in both natural as well as in CVD-grown diamond. Recent advances in the growth of high quality single crystal CVD diamond have led to an increased interest in the atomistic and electronic structure of (100) dislocation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::befab874a6e763ae9cb5e6735f2dd053
https://doi.org/10.1002/pssa.200671102
https://doi.org/10.1002/pssa.200671102
Publikováno v:
Materials Science Forum. :453-456
Experiment has shown that 4H- and 6H-SiC pin diodes degrade rapidly during forward biased operation. This degradation is accompanied by the formation and expansion of stacking faults in the basal p ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c916f650ee3818128fcabab94ac39359
https://doi.org/10.4028/www.scientific.net/msf.457-460.453
https://doi.org/10.4028/www.scientific.net/msf.457-460.453
Publikováno v:
Defect and Diffusion Forum. :11-30
The core structures of perfect 60 and edge dislocations in diamond are investigated atomistically in a density-functional based tight-binding approach, and their dissociation is discussed both in terms of structure and energy. Furthermore, high resol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca5bb0a5af8f7097bd65b9d433936ce5
https://doi.org/10.4028/www.scientific.net/ddf.226-228.11
https://doi.org/10.4028/www.scientific.net/ddf.226-228.11
Publikováno v:
Journal of Physics: Condensed Matter. 15:S2951-S2960
The perfect 60° glide dislocation in diamond serves as an example of how different aspects of dislocations can be modelled in an approach combining continuum elasticity theory with atomistic density-functional-based tight-binding calculations. After
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::400059b7c7491a8caae5c720106e8c93
https://doi.org/10.1088/0953-8984/15/39/018
https://doi.org/10.1088/0953-8984/15/39/018
Publikováno v:
physica status solidi (c). :1684-1709
In this article we review our theoretical work on dislocations in GaN. The methods applied are two distinct approximations to density functional theory: Density functional based tight-binding total energy calculations allow the prediction of low ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f624efe63b77bd9fb53a30297ad48b4d
https://doi.org/10.1002/pssc.200303126
https://doi.org/10.1002/pssc.200303126