List of Contributors

Autor: I.O. Akhundov, V.Sh. Aliev, V.L. Alperovich, A.P. Anciferov, A.L. Aseev, A.K. Bakarov, I.I. Beterov, M.V. Budantsev, A.A. Bykov, A.V. Chaplik, A. Chin, I.A. Derebezov, D.V. Dmitriev, S.A. Dvoretsky, A.V. Dvurechenskii, M.V. Entin, V.M. Entin, L.I. Fedina, T.A. Gavrilova, K.V. Grachev, V.A. Gritsenko, A.K. Gutakovskii, A.V. Haisler, V.A. Haisler, D.G. Ikusov, D.R. Islamov, E.V. Ivanova, M.M. Kachanova, V.V. Kaichev, A.K. Kalagin, A.N. Karpov, D.M. Kazantsev, S.S. Kosolobov, A.S. Kozhukhov, D.A. Kozlov, V.D. Kuzmin, Z.D. Kvon, A.V. Latyshev, A.S. Mardezov, A.S. Medvedev, N.N. Mikhailov, A.G. Milekhin, D.A. Nasimov, I.G. Neizvestny, L.A. Nenasheva, E.B. Olshanetsky, T.V. Perevalov, A.G. Pogosov, D.A. Pokhabov, V.P. Popov, V.Ya. Prinz, V.G. Remesnik, S.V. Rihlicky, E.E. Rodyakina, D.I. Rogilo, K.N. Romanyuk, N.S. Rudaya, I.I. Ryabtsev, I.V. Sabinina, V.K. Sandyrev, A.A. Saraev, O.I. Semenova, D.V. Sheglov, A.A. Shevyrin, A.A. Shklyaev, V.A. Shvets, N.L. Shwartz, G.Yu. Sidorov, Yu.G. Sidorov, S.V. Sitnikov, E.V. Spesivcev, A.S. Terekhov, S.A. Teys, O.A. Tkachenko, V.A. Tkachenko, A.I. Toropov, D.B. Tretyakov, A.V. Tsarev, I.E. Tyschenko, I.N. Uzhakov, V.S. Varavin, S.A. Vitkalov, A.I. Yakimov, M.V. Yakushev, A.S. Yaroshevich, D.R.T. Zahn, M.V. Zamoryanskaya, E.Yu. Zhdanov, Yu.A. Zhivodkov

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0da5de83dc57a11bf54bce44596bd0a4
https://doi.org/10.1016/b978-0-12-810512-2.00028-7

Composition and structure of chemically prepared GaAs(1 1 1)A and (1 1 1)B surfaces

Autor: V.L. Alperovich, Oleg E. Tereshchenko, A.S. Terekhov

Publikováno v: Surface Science. 600:577-582

The (1 1 1)A and (1 1 1)B surfaces of GaAs chemically treated in HCl-isopropanol solution (HCl-iPA) and annealed in vacuum were studied by means of X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED) and electron energy los

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::93d314cad2736852c7f2e59b20afb16a
https://doi.org/10.1016/j.susc.2005.11.007

Polarized cathodoluminescence induced by low-energy spin-polarized electrons injected in p-GaAs(Cs,O)

Autor: A.S. Terekhov, Georges Lampel, Jacques Peretti, Y. Lassailly, A.S. Jaroshevich, V.L. Alperovich, Nicolas Rougemaille, T. Wirth

Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 536:302-307

We report on the experimental study of polarized cathodoluminescence induced by low-energy spin-polarized electrons injected into a semiconductor. A beam of polarized electrons was prepared by emission of optically oriented electrons from p-GaAs(Cs,O

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::19a3614e465c51645fb8093eb33a608b
https://doi.org/10.1016/j.nima.2004.08.088

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Local-order of chemically-prepared GaAs() surfaces

Autor: J. E. Bonnet, Daniel Paget, A.S. Terekhov, Oleg E. Tereshchenko, P. Chiaradia, R. Belkhou, A. Taleb-Ibrahimi

Publikováno v: Surface Science. :411-416

In the present work HCl–propanol treated and vacuum annealed GaAs(1 0 0) surfaces were studied by means of soft X-ray photoemission and reflectance anisotropy spectroscopies (SXPS, RAS). On the as-treated surface, As 3d and Ga 3d core level spectra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57b56cb747ef06c2b2db59038ff375e7
https://doi.org/10.1016/s0039-6028(02)01279-7