Zobrazeno 1 - 10
of 71
pro vyhledávání: '"A.R. Sugg"'
Autor:
Michael J. Lange, J.J. Sudol, J.C. Dries, P. Dixon, Marshall J. Cohen, A.R. Sugg, Gregory H. Olsen
Publikováno v:
Journal of Crystal Growth. 222:693-696
Low dark current (210 nA/cm2 at −1 V), high shunt resistance area product (0.3 MΩ cm2) photodetector arrays have been fabricated on 100 mm diameter InGaAs/InP epitaxial wafers. The lattice-matched In.53Ga.47As was deposited by organometallic vapor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b465a36f10c7dc6da10bba25cabbfdc0
https://doi.org/10.1016/s0022-0248(00)00939-8
https://doi.org/10.1016/s0022-0248(00)00939-8
Publikováno v:
Journal of Electronic Materials. 28:1433-1439
A systematic study of the sealed ampoule diffusion of zinc into epitaxially grown InP, In0.53Ga0.47As, In0.70Ga0.30As, In0.82Ga0.18As, and through the InAsP/InGaAs interface is presented. Diffusion depths were measured using cleave-and-stain techniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dbc9e3867f557e9a3c575ed4836898d
https://doi.org/10.1007/s11664-999-0136-5
https://doi.org/10.1007/s11664-999-0136-5
Continuous-wave operation of λ=3.25 μm broadened-waveguide W quantum-well diode lasers up to T=195 K
Autor:
D. Z. Garbuzov, Ramon U. Martinelli, Donna W. Stokes, Christopher L. Felix, Igor Vurgaftman, H. Lee, John C. Connolly, M. Maiorov, A.R. Sugg, Gregory H. Olsen, William W. Bewley, Jerry R. Meyer, R. J. Menna
Publikováno v:
Applied Physics Letters. 76:256-258
Mid-infrared (λ=3.25 μm) broadened-waveguide diode lasers with active regions consisting of 5 type-II “W” quantum wells operated in continuous-wave (cw) mode up to 195 K. At 78 K, the threshold current density was 63 A/cm2, and up to 140 mW of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79c252d6ceaef783f85743708e792b30
https://doi.org/10.1063/1.125739
https://doi.org/10.1063/1.125739
Autor:
Gregory H. Olsen, Stephen R. Forrest, Michael J. Lange, Marshall J. Cohen, J.S. Vermaak, J.C. Dries, M.H. Ettenberg, A.R. Sugg
Publikováno v:
Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013).
Summary form only given. A high-performance camera, based on a 320/spl times/240 element array of indium gallium arsenide (In/sub .53/Ga/sub .47/As) photodiodes, has been specially fabricated to allow detection of light from the visible through the n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41eb618ae227c735df05834c7b883181
https://doi.org/10.1109/cleo.1999.833826
https://doi.org/10.1109/cleo.1999.833826
Autor:
M. J. Yang, A.R. Sugg, William W. Bewley, Donna W. Stokes, Jerry R. Meyer, Hao Lee, John C. Connolly, Igor Vurgaftman, Ramon U. Martinelli, Edward H. Aifer, B. V. Shanabrook, Christopher L. Felix, Linda J. Olafsen
Publikováno v:
Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013).
Summary form only given. The development of semiconductor lasers capable of emitting at wavelengths longer than 3 /spl mu/m at high CW operating temperatures has proven to be quite challenging. To our knowledge, the best result reported previously wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eb59ea344e1ce36a2e4004acd418a5f
https://doi.org/10.1109/cleo.1999.834314
https://doi.org/10.1109/cleo.1999.834314
Autor:
A.R. Sugg, J.J. Sudol, Martin H. Ettenberg, Michael J. Lange, Gregory H. Olsen, Stephen R. Forrest, Marshall J. Cohen
Publikováno v:
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).
Photodetector array results for InGaAs/InP epitaxial layers grown on 50 and 75 mm diameter InP substrates are presented. Best shunt-resistance area products for lattice-matched material exceed 100,000 ohm-cm/sup 2/. X-ray topography results indicate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02a3e575474322666ac15713df1944d4
https://doi.org/10.1109/iciprm.1999.773709
https://doi.org/10.1109/iciprm.1999.773709
Publikováno v:
Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243).
Near IR linear and two-dimensional arrays of InGaAs photodiodes lattice matched to InP substrates are important for a wide variety of commercial applications including, spectroscopy, subsurface art inspection, surveillance, industrial process control
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::407285891fd11753c12fcd23f6eeccc4
https://doi.org/10.1109/leos.1998.739466
https://doi.org/10.1109/leos.1998.739466
Publikováno v:
Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243).
We present data on and fabrication techniques for the first 320/spl times/240 room temperature InGaAs camera that can image in the NIR from 1.1-2.0 /spl mu/m.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1c5da7de78771afa0f0c7dc0f0e5c93
https://doi.org/10.1109/leos.1998.739465
https://doi.org/10.1109/leos.1998.739465
Autor:
William W. Bewley, I. Vurgaftman, Linda J. Olafsen, Gregory H. Olsen, A.R. Sugg, John C. Connolly, Jerry R. Meyer, Ramon U. Martinelli, Christopher L. Felix, Hao Lee, E.A. Aifer
Publikováno v:
Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243).
We report the high-temperature cw operation of optically-pumped W-lasers (so named because of the shape of the conduction band minimum). The active region of the MBE-grown structure consists of 80 periods of 16/25/40 /spl Aring/ InAs-GaInSb-AlAs-AlAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36a396877c14935a8641e6a040f52848
https://doi.org/10.1109/leos.1998.739717
https://doi.org/10.1109/leos.1998.739717
Autor:
Gregory H. Olsen, H. Lee, James R. Lindle, M. J. Yang, A.R. Sugg, Donna W. Stokes, M. Maiorov, John C. Connolly, M. J. Jurkovic, R. U. Martinelli, William W. Bewley, R. J. Menna, Dmitri Z. Garbuzov, Jerry R. Meyer, Igor Vurgaftman, Christopher L. Felix, R.E. Bartolo
Publikováno v:
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092).
There is a growing demand for midwave-infrared (3-5 /spl mu/m) laser diodes operating in CW mode at non-cryogenic temperatures, for chemical sensing and other applications requiring low cost and portability. While optically-pumped mid-IR "W" lasers r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0503b237e20a72a925861b71137ad2de
https://doi.org/10.1109/islc.2000.882321
https://doi.org/10.1109/islc.2000.882321