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pro vyhledávání: '"A.R. Duchenois"'
Autor:
J.L. Benchimol, J. Mba, A.R. Duchenois, P. Berdaguer, B. Sermage, G. Le Roux, S. Blayac, M. Riet, J. Thuret, C. Gonzalez, P. Andre
Publikováno v:
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).
InGaAs/lnP heterojunction bipolar transistors (HBT) with a carbon doped base are shown to have lower gain than those with Be doped base, partly because of lower electron lifetime. In order to keep advantage of the low diffusivity of carbon dopant, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fca0c7b26668f06ce8898b833de1faec
https://doi.org/10.1109/iciprm.1999.773756
https://doi.org/10.1109/iciprm.1999.773756
