Zobrazeno 1 - 10
of 33
pro vyhledávání: '"A.P. Litovchenko"'
Autor:
V. Tartachnyk, M. B. Pinkovska, A.P. Litovchenko, O.V. Konoreva, M. Drahomanov, V. Opilat, P.G. Litovchenko
Publikováno v:
Semiconductor physics, quantum electronics and optoelectronics. 12:276-279
GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46c31837083a821c672b107adb9521e8
https://doi.org/10.15407/spqeo12.03.276
https://doi.org/10.15407/spqeo12.03.276
Autor:
Vladimir Cindro, M. Mikelsen, Edouard Monakhov, A. Groza, M. I. Starchik, V. K. Dubovoy, V. Lastovetsky, L.I. Barabash, G.-F. Dalla Betta, A.P. Litovchenko, Piero Giubilato, P.G. Litovchenko, V. Khomenkov, D. Bisello, Nicola Zorzi, Maurizio Boscardin, A. Candelori, Robert R. Rando, W. Wahl, Bengt Gunnar Svensson
Publikováno v:
Fondazione Bruno Kessler-IRIS
Radiation hardness of planar detectors processed from pre-irradiated and thermo-annealed n-type FZ silicon substrates, and standard FZ as a reference, was studied. The high purity n-Si wafers with carrier concentration 4.8×10 11 cm −3 were pre-irr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f81c85faae514a703878581de8ea3567
https://doi.org/10.1016/j.nima.2006.05.207
https://doi.org/10.1016/j.nima.2006.05.207
Autor:
A.P. Litovchenko, A. A. Groza, Piero Giubilato, V. Khomenkov, M. I. Starchik, Andrea Candelori, P.G. Litovchenko, Dario Bisello, Riccardo Rando
Publikováno v:
Solid State Phenomena. :199-204
The oxygen precipitation kinetic in CZ silicon irradiated by reactor neutrons and high energy protons (50 MeV) was studied by IR spectroscopy technique. At an early annealing stage (1000°C) dissolution of grown oxide microprecipitates was observed i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a89de7eb74b8fd2f63ce86d651585f1
https://doi.org/10.4028/www.scientific.net/ssp.108-109.199
https://doi.org/10.4028/www.scientific.net/ssp.108-109.199
Autor:
A.P. Litovchenko, I. Stavitski, A. Kaminski, J. Wyss, Devis Pantano, Dario Bisello, A. Candelori, Riccardo Rando
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 514:62-68
We summarize in a general review all the studies performed by our group in the last years in the field of radiation hardening of silicon detectors for High Energy Physics experiments. Test structures (silicon p–i–n diodes) were irradiated by 16 M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::028585a10bb0cf5304b21507a12791ad
https://doi.org/10.1016/j.nima.2003.08.084
https://doi.org/10.1016/j.nima.2003.08.084
Autor:
W. Wahl, D. Bisello, V.F. Lastovetsky, J. Wyss, L.I. Barabash, L.A. Polivtsev, V. P. Semenov, P.G. Litovchenko, A.P. Litovchenko, Robert R. Rando, L. A. Trykov, T.I. Kibkalo, J. I. Kolevatov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 512:408-411
Large active volume Si(Li) detectors were successfully developed for γ-ray spectrometry at room temperature that show a sufficient efficiency and an energy resolution that is better than scintillation detectors. The higher efficiency of the proposed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f9d82fd9974747ecf5c3ee501ed19e8
https://doi.org/10.1016/s0168-9002(03)01919-3
https://doi.org/10.1016/s0168-9002(03)01919-3
Autor:
L.A. Polivtsev, Dario Bisello, W. Wahl, V.F. Lastovetsky, A.P. Dolgolenko, J. Wyss, A.P. Litovchenko, A. A. Groza, V. I. Khivrich, Andrea Candelori, L.I. Barabash, P.G. Litovchenko
Publikováno v:
Solid State Phenomena. :399-404
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7997db4487f141ea172c0e979e321c2a
https://doi.org/10.4028/www.scientific.net/ssp.95-96.399
https://doi.org/10.4028/www.scientific.net/ssp.95-96.399
Autor:
Dario Bisello, Manuel Lozano, A. Kaminski, C. Martinez, A. Candelori, J. Wyss, Miguel Ullan, G.-F.D. Betta, Riccardo Rando, Nicola Zorzi, Maurizio Boscardin, A.P. Litovchenko
Publikováno v:
Fondazione Bruno Kessler-IRIS
Oxygenated and standard (not oxygenated) silicon diodes processed by CNM and IRST have been irradiated by 27 MeV protons and compared with standard devices from ST Microelectronics. As expected, the leakage current density increase rate (/spl alpha/)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::227a2e4abb6e02fc5239e09971079ee6
https://doi.org/10.1109/tns.2003.814573
https://doi.org/10.1109/tns.2003.814573
Autor:
A.P. Litovchenko, W. Wahl, G.G. Shmatko, J. Wyss, M. B. Pinkovska, A. A. Groza, V. I. Khivrich, M. I. Starchik, V. I. Varnina, P.G. Litovchenko, D. Bisello, L. A. Polivzev, A. Candelori
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 514:44-46
In silicon material with oxygen concentration in the range (4–9)×10 17 cm −3 , grown by the CZ method and irradiated by reactor neutrons, the interstitial oxygen mainly participates in A-center (V+O) creation. A-center concentration is linearly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e01ef2e04a0418e9fb83231aca6f843
https://doi.org/10.1016/j.nima.2003.08.082
https://doi.org/10.1016/j.nima.2003.08.082
Autor:
S. Kanevskyj, V. Opilat, Piero Giubilato, M. B. Pinkovska, V. Tartachnyk, D. Bisello, A.P. Litovchenko, P.G. Litovchenko, Robert R. Rando, V. Khomenkov
Electrical characteristics of red and green GaP light diodes irradiated by fast electrons and neutrons were studied. It has been found that S-type current–voltage curves, measured in current generator mode at low-temperature, show presence of fine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6fa8e399e41afb6dd768fbb4e81871bf
http://hdl.handle.net/11577/2449245
http://hdl.handle.net/11577/2449245
