Zobrazeno 1 - 10
of 12
pro vyhledávání: '"A.O. Sofiienko"'
Publikováno v:
Materials Science in Semiconductor Processing. 67:28-32
The nature and relative contributions (RCs) of various radiative recombination processes to the photoluminescence (PL) spectra for bulk nanostructured Pb 0.30 Cd 0.70 I 2 solid solutions have been established at different temperatures. The analysis i
Publikováno v:
Acta Physica Polonica A. 129:304-309
This article presents the results of an experimental investigation of the energy spectra of charge carrier traps in undoped high-resistivity ZnSe single crystals. Fourteen peaks were found in the thermostimulated luminescence spectra of the ZnSe samp
Publikováno v:
Physica B: Condensed Matter. 465:1-6
This work presents the extensive experimental studies of the X-ray stimulated luminescence, conductivity, phosphorescence and electric current relaxation, and the thermally stimulated luminescence and conductivity of monocrystalline ZnSe. It was foun
Publikováno v:
Radiation Measurements. 65:36-44
This work presents an analysis of the main requirements for semiconductor detectors of ionising radiation that can be operated over a wide temperature range. The analysis shows that wide-gap semiconductors with a band gap greater than 2.0 eV are a be
Publikováno v:
Radiation Measurements. 47:27-29
Measurements of intrinsic conductivity and X-ray induced conductivity were performed on specially undoped ZnSe samples. The measurements demonstrated that sensors made of ZnSe have minor intrinsic conductivity when heating up to the temperature of 18
Publikováno v:
Physics Research International
Monte Carlo simulations were used to study photon production in a panoramic X-ray tube with a conical tungsten target to determine the optimal characteristics of the target shape and electron beam configuration. Several simulations were performed for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f531709ac042edc17e4e9ecb2c4361be
https://hdl.handle.net/1956/9846
https://hdl.handle.net/1956/9846
Autor:
V.Ya. Degoda, A.O. Sofiienko
This article presents a theoretical model for the calculation of the current impulse from X-ray induced conductivity in wide-gap semiconductors that contain different types of traps and recombination centres. The absorption of one X-ray photon in a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b578b20b305bf2ec590b68ee09e6c849
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