Zobrazeno 1 - 10
of 63
pro vyhledávání: '"A.O Lebedev"'
Publikováno v:
TransNav: International Journal on Marine Navigation and Safety of Sea Transportation, Vol 12, Iss 4, Pp 693-697 (2018)
The paper explores the possibility of creating an underwater apparatus in the form of a body of rotation. The form of the device will allow to effectively examine the found underwater objects, the bottom topography, measurement of other parameters of
Externí odkaz:
https://doaj.org/article/b459b5f319104421959324503bd98eb9
Publikováno v:
Disaster Medicine. :29-33
One of the methods of biological dosimetry is the use of information on the concentration of lymphocytes in the peripheral blood of victims in the first days after irradiation. The aim of the study was to validate the lymphocyte test method for predi
Publikováno v:
Disaster Medicine. :10-19
The measures on liquidation of the Chernobyl accident consequences are analyzed from the point of view of topical issues of ensuring radiation safety of the personnel of radiation hazardous facilities and the population. The following problems have b
Publikováno v:
Nano- i Mikrosistemnaya Tehnika. 22:153-164
Publikováno v:
MORSKIE INTELLEKTUAL`NYE TEHNOLOGII.
В настоящее время каждый подводный аппарат, вне зависимости от назначения и формы корпуса, является уникальным сооружением, предназнач
Publikováno v:
Novikov, S, Lebedeva, N, Satrapinski, A & Walden, J 2015, ' Graphene based sensor for environmental monitoring of NO2 ', Procedia Engineering, vol. 120, pp. 586-589 . https://doi.org/10.1016/j.proeng.2015.08.731
Gas sensor operating in part-per billion (ppb) range is required for environmental monitoring of nitrogen dioxide. Currently there is a lack of cheap sensors, which can operate in this concentration range. In this work, an ultrasensitive gas sensor b
Publikováno v:
Journal of Crystal Growth. 275:e485-e489
A model that includes both thermophoretic force and advective flow is developed to describe the mechanism of appearance of carbon macroinclusions in silicon carbide ingots grown by modified-Lely technique. The main moving force acting on the carbon p
Publikováno v:
Journal of Crystal Growth. 318:394-396
Defects caused by 15R polytype inclusions in 4H silicon carbide ingots have been considered. Growth rate along with curvature of the interface determines the stability of the 4H-polytype reproduction. The domain structure arising in the 4H polytype a
Publikováno v:
Materials Science and Engineering: B. :77-81
The growth of silicon carbide crystals in vacuum by the LETI method gives 6H and 4H polytypes of n- and p-type conductivity. This is done by the appropriate selection of construction material, doping conditions and crystallography orientation of the
Autor:
V.M Botnaryk, A.P. Mirgorodsky, Yu. E. Kitaev, Yu. V. Zhilyaev, I. N. Goncharuk, Alexander N. Smirnov, A.O Lebedev, O. Semchinova, V. Yu. Davydov, A.M Tsaregorodtsev, Mikhail B. Smirnov
Publikováno v:
Journal of Crystal Growth. :656-660
We present the results of a detailed study of the first and second-order Raman scattering in wurtzite GaN and AlN at room and liquid helium temperatures. A complete group-theory analysis of phonon symmetry and optical selection rules permitted us to