Zobrazeno 1 - 10
of 139
pro vyhledávání: '"A.N. Stepanova"'
Autor:
T.A. Yakovleva, A.N. Stepanova
Publikováno v:
Право и государство: теория и практика. :95-97
Akademický článek
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Autor:
Z.I. Koryakina, A.N. Stepanova
Publikováno v:
Аграрное и земельное право. :110-113
Publikováno v:
E3S Web of Conferences, Vol 222, p 02005 (2020)
The results of research in some cases allow to judge the change in the functional activity of the studied organs after the use of the preparation. The obtained factual material significantly supplements the information about the biological properties
Publikováno v:
Водные биоресурсы и среда обитания. 1:97-101
Autor:
L. L. Aksenova, E. S. Mashkova, E. V. Rakova, V. A. Molchanov, N.A. Kiselev, V. V. Roddatis, E.I. Givargizov, John L. Hutchison, A.N. Stepanova
Publikováno v:
Micron
Diamond single crystals were grown on the silicon whiskers by a hot filament chemical vapor deposition technique at the filament temperature about 2100degreesC and the temperature of support 800degreesC. Specimens were examined by SEM, TEM, HRTEM and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73700f6c384d68c801023d5488a3f49a
https://ora.ox.ac.uk/objects/uuid:1a9ed5af-421a-46d5-8452-c5f59c240bc6
https://ora.ox.ac.uk/objects/uuid:1a9ed5af-421a-46d5-8452-c5f59c240bc6
Autor:
L. N. Obolenskaya, N. A. Kiselev, O. M. Zhigalina, E.I. Givargizov, V. I. Muratova, A.N. Stepanova
Publikováno v:
Crystallography Reports. 55:500-506
Nanowires have been prepared by the high-temperature oxidation of Si whiskers. The dependences of the nanowire formation on the oxidation parameters have been investigated. The oxidation rate is shown to depend on the whisker diameter. Oxidation in d
Akademický článek
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Autor:
N A Kiselev, L. N. Obolenskaya, A.N. Stepanova, V. I. Muratova, E.I. Givargizov, O M Zhigalina
Publikováno v:
Journal of Physics: Conference Series. 61:352-358
Regularities of nanowire formation by thinning silicon whiskers at high-temperature oxidation in the range 900-1050 °C were studied. The oxidation was performed in a flow of dry or wet oxygen. It is shown that a stopping of the oxidation process occ
Autor:
J. L. Hatchison, E.I. Givargizov, E. V. Rakova, L. L. Aksenova, V. A. Molchanov, N. A. Kiselev, A.N. Stepanova, E. S. Mashkova
Publikováno v:
Crystallography Reports. 47:S159-S168
The data on the deposition, structure, and electric properties of crystalline diamond particles at silicon tips grown on single-crystal silicon substrates obtained over the last decade, mainly at the Institute of Crystallography of the Russian Academ