Zobrazeno 1 - 10
of 46
pro vyhledávání: '"A.N. Pustovit"'
Akademický článek
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Autor:
V. G. Beshenkov, Hadis Morkoç, N. Izyumskaya, Andrey Bakin, V. Avrutin, Ümit Özgür, F. Reuss, A.N. Pustovit, Hosun Lee, A. Che Mofor, Andreas Waag, Wladimir Schoch, Abdelhamid El-Shaer
Publikováno v:
Superlattices and Microstructures. 39:291-298
We studied the structural and electronic properties of Zn1−xMnxO ( 0 x 0.5 ) layers grown by peroxide molecular beam epitaxy. Hall effect measurements showed that the layers were highly resistive, pointing to strong electrical compensation of the Z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5f9a6d0b612d41add17633c2eb930d8
https://doi.org/10.1016/j.spmi.2005.08.051
https://doi.org/10.1016/j.spmi.2005.08.051
Autor:
R. Kling, Dmitry Roshchupkin, V.I. Zinenko, F. Reuss, A.N. Pustovit, Yu.A. Agaphonov, A.F. Vyatkin, C. Kirchner, Andreas Waag
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:179-182
In the last two decades, diluted magnetic semiconductors have attracted great attention as promising materials for spintronics applications. [K. Sato, H. Katyama-Yoshida, Jpn. J. Phys., Part 2 39 (2000) L555] theoretically predicted that ZnO doped wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6f662df4b82a756ff4717d3eb36cf43
https://doi.org/10.1016/j.nimb.2005.04.097
https://doi.org/10.1016/j.nimb.2005.04.097
Autor:
V. V. Mamedov, David C. Look, M. V. Chukichev, Ya. I. Alivov, A.N. Pustovit, V. I. Zinenko, Yu.A. Agafonov, B. M. Ataev
Publikováno v:
Solid-State Electronics. 48:2343-2346
A ZnO-based metal–insulator–semiconductor junction has been fabricated using an isolation layer fabricated by N+ ion implantation. I–V dependences show a good rectifying diode-like behavior with a low leakage current of 10−6 A and a threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f415ebcf5f4076e7957d71d2df79b4a0
https://doi.org/10.1016/j.sse.2004.05.063
https://doi.org/10.1016/j.sse.2004.05.063
Publikováno v:
Materials Science and Engineering: B. 89:229-233
Sb redistribution in an MBE-grown strained Si/Si0.85Ge0.15/Si〈Sb〉 heterostructure was studied by secondary ion mass-spectrometry. Two types of annealing procedures were applied, thermal annealing in vacuum furnace and photon annealing in hydrogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9637e9da4192d00b428014502d02e41
https://doi.org/10.1016/s0921-5107(01)00791-7
https://doi.org/10.1016/s0921-5107(01)00791-7
Autor:
A.F. Vyatkin, A.N. Pustovit, V. I. Zinenko, Yu. A. Agafonov, V.N. Mordkovich, M. Yu. Barabanenkov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 171:301-308
The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both experimentally and theoretically. Si crystals are implanted with oxygen and nitrogen ions with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ec695856d5f9ae64183c3b20de786c5
https://doi.org/10.1016/s0168-583x(00)00261-5
https://doi.org/10.1016/s0168-583x(00)00261-5
Proton and temperature-induced competitive segregation of iron on surface and volume sinks of silica
Autor:
L. L. Kashkarov, M. Yu. Barabanenkov, S. N. Shilobreeva, A.N. Pustovit, Yu. A. Agafonov, V. I. Zinenko
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 256:216-218
Experimental results are delivered on iron redistribution in silica for proton irradiation followed by thermal annealing. Iron ions are initially implanted into silica at room temperature. Proton irradiation is performed at different temperatures. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb94352c518041bfde9cb02b4c480840
https://doi.org/10.1016/j.nimb.2006.12.006
https://doi.org/10.1016/j.nimb.2006.12.006
Publikováno v:
AIP Conference Proceedings.
Cold implants become a very promising technique for ultra-shallow p-n junction formation in modern integrated circuits production. However, the physical phenomena underlying the cold implantation processes are still not quite understandable. Boron an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d313e6fb4f7b2d755b541951cbc0af79
https://doi.org/10.1063/1.4766495
https://doi.org/10.1063/1.4766495
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
Further CMOS device scaling beyond 0.13mm requires very shallow p-n junction formation for the source and drain extensions. Ultra-low energy ion implantation is the key process to achieve this goal. Two principal drawbacks of the process: sample surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1554d287f3d0ff2c1c6f1516157090c
https://doi.org/10.1109/iit.2002.1258075
https://doi.org/10.1109/iit.2002.1258075