Zobrazeno 1 - 10
of 127
pro vyhledávání: '"A.N. Danilewsky"'
Publikováno v:
Microelectronics reliability, 2019, Vol.99, pp.232-238 [Peer Reviewed Journal]
The application of X-ray Diffraction Imaging to measure in operando thermal strains at individually powered components within fully packaged LM3046 silicon devices is described. It is shown that as the local strains increase with power dissipated, ab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df34e5f63a6462b5a8863d586dc085a0
https://doi.org/10.1016/j.microrel.2019.06.006
https://doi.org/10.1016/j.microrel.2019.06.006
Autor:
A.N. Danilewsky
Publikováno v:
Crystal Research and Technology. 55:2000012
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22a562b0f93fe3de659c9cc51829a3b5
https://doi.org/10.1002/crat.202000012
https://doi.org/10.1002/crat.202000012
Autor:
Lukas Helfen, A.N. Danilewsky, David Allen, Tilo Baumbach, Petr Mikulík, Patrick J. McNally, J. Wittge, D. Haenschke, Z. Li
Publikováno v:
Journal of Synchrotron Radiation. 22:1083-1090
Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full-field X-ray microdiffraction imaging using synchrotron radiation is e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f57dd6dd17008b497c803adc76e54ed
https://doi.org/10.1107/s1600577515009650
https://doi.org/10.1107/s1600577515009650
Publikováno v:
Journal of Crystal Growth. 416:82-89
It could be shown that the hydrogen (H2) treatment of lead iodide (PbI2) is capable to effectively reduce oxidic impurities contained in the source material used for single crystal growth. Comparative experiments of melting PbI2 in H2 and Ar atmosphe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::879b3e91cac46e523c0c0000e192c796
https://doi.org/10.1016/j.jcrysgro.2015.01.024
https://doi.org/10.1016/j.jcrysgro.2015.01.024
Publikováno v:
Physical Review Letters. 119
Correlated x-ray diffraction imaging and light microscopy provide a conclusive picture of three-dimensional dislocation arrangements on the micrometer scale. The characterization includes bulk crystallographic properties like Burgers vectors and dete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02d10819d5885296742cf33fd0a88542
https://doi.org/10.1103/physrevlett.119.215504
https://doi.org/10.1103/physrevlett.119.215504
Autor:
Patrick J. McNally, A.N. Danilewsky, E. Gorostegui-Colinas, J. Wittge, M. Reyes Elizalde, J. Garagorri, David Allen, Brian K. Tanner
Publikováno v:
Crystals, Vol 7, Iss 11, p 347 (2017)
Crystals; Volume 7; Issue 11; Pages: 347
Crystals, 2017, Vol.7(11), pp.347 [Peer Reviewed Journal]
Crystals; Volume 7; Issue 11; Pages: 347
Crystals, 2017, Vol.7(11), pp.347 [Peer Reviewed Journal]
The crack geometry and associated strain field around Berkovich and Vickers indents on silicon have been studied by X-ray diffraction imaging and micro-Raman spectroscopy scanning. The techniques are complementary, the Raman data coming from within a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::446cc8e6fc7ee60ec70c9c651bca64a8
https://doi.org/10.20944/preprints201710.0061.v1
https://doi.org/10.20944/preprints201710.0061.v1
Autor:
W. Seifert, Martin Kittler, A.N. Danilewsky, Lamine Sylla, Hartmut S. Leipner, D. Oriwol, E.-R. Carl
Publikováno v:
Acta Materialia. 61:6903-6910
The formation of dislocation pile-ups and related small-angle subgrain boundaries in block-cast multicrystalline silicon for photovoltaic applications has been studied by means of white-beam X-ray topography (WB-XRT). For this purpose, samples sliced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe0ff77cdae63a2f5c9023ee9d7a1e57
https://doi.org/10.1016/j.actamat.2013.08.002
https://doi.org/10.1016/j.actamat.2013.08.002
Autor:
Patrick J. McNally, J. Garagorri, M.R. Elizalde, D. Jacques, Patrik Vagovic, A.N. Danilewsky, D.K. Bowen, Tilo Baumbach, R. Bytheway, J. Wittge, David Allen, M. C. Fossati, Brian K. Tanner
Publikováno v:
Powder Diffraction. 28:95-99
The apparatus for X-ray diffraction imaging (XRDI) of 450-mm wafers, is now placed at the ANKA synchrotron radiation source in Karlsruhe, is described in the context of the drive to inspect wafers for plastic deformation or mechanical damage. It is s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c854b2e59291fdd7ab40387b61a316bf
https://doi.org/10.1017/s0885715613000122
https://doi.org/10.1017/s0885715613000122
Autor:
Patrick J. McNally, Aidan Cowley, A. Ivankovic, I. De Wolf, A.N. Danilewsky, C. S. Wong, Vladimir Cherman, Mireia Bargallo Gonzalez, Nick Bennett, Bart Vandevelde
Next generation “More than Moore” integrated circuit (IC) technology will rely increasingly on the benefits attributable to advanced packaging ( www.itrs.net [1] ). In these increasingly heterogeneous systems, the individual semiconductor die is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88c7426af6264beffdc9914b752218ca
https://hdl.handle.net/10453/159445
https://hdl.handle.net/10453/159445
Autor:
Brian K. Tanner, D.M. Allen, A.N. Danilewsky, J. Garagorri, E. Gorostegui-Colinas, J. Wittge, M. R. Elizalde, C. Ehlers, Patrick J. McNally
Publikováno v:
Journal of applied crystallography, 2016, Vol.49(1), pp.250-259 [Peer Reviewed Journal]
The asterism observed in white radiation X-ray diffraction images (topographs) of extended cracks in silicon is investigated and found to be associated with material that is close to breakout and surrounded by extensive cracking. It is a measure of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e2bb538e1b895f6044180d9f8d224a2
http://dro.dur.ac.uk/18771/1/18771.pdf
http://dro.dur.ac.uk/18771/1/18771.pdf