Zobrazeno 1 - 10
of 153
pro vyhledávání: '"A.N. Chandorkar"'
Autor:
Harald Gossner, V. Ramgopal Rao, A.N. Chandorkar, Mayank Shrivastava, Maryam Shojaei Baghini, Ankur Gupta
Publikováno v:
IEEE Transactions on Electron Devices. 62:3176-3183
In this paper, we report drain-extended MOS device design guidelines for the RF power amplifier (RF PA) applications. A complete RF PA circuit in a 28-nm CMOS technology node with the matching and biasing network is used as a test vehicle to validate
Publikováno v:
Microwave and Optical Technology Letters. 56:1204-1211
A novel technique of optically switching the notch frequency of a band stop filter using photoconductive switch is presented. The effect of finite switch photoconductance on the frequency response and the design limitations is analyzed using transmis
Publikováno v:
Circuits, Systems, and Signal Processing. 32:2559-2579
Progress in the digital multimedia technologies during the last decade has offered many facilities in the transmission, reproduction, and manipulation of data. However, this advancement has also brought the problem such as copyright protection for co
Publikováno v:
Microelectronics Reliability. 51:2357-2365
This paper presents a novel sensitivity-based, transistor-level, dual threshold voltage (V th ) assignment technique for the design of low power nanoscale CMOS circuits. The proposed technique is based on the Plackett–Burman Design of Experiment me
Autor:
Hiroshi Iwai, Nobuyuki Sugii, A.N. Chandorkar, Katsuya Matano, Parhat Ahmet, Wataru Hosoda, T. Hattori, Kuniyuki Kakushima, Kazuo Tsutsui, Kohei Noguchi
Publikováno v:
ECS Transactions. 16:29-34
We investigated the modulation of Schottky barrier height (Φb) of Ni silicide by inserting an Er layer between Si (100) substrate and Ni layer before silicidation annealing. Φb for electrons of NiSi was found to be decreased by using this technique
Autor:
Parhat Ahmet, Takeo Hattori, A.N. Chandorkar, Hiroshi Iwai, Kuniyuki Kakushima, Koichi Okamoto, Kazuo Tsutsui, Nobuyuki Sugii
Publikováno v:
ECS Transactions. 16:203-212
In this study, we have studied the mechanism of equivalent oxide thickness (EOT) increase after annealing using oxygen diffusion model from W gate electrode. It has been revealed that proper thickness W insertion into metal/high-k interface could dep
Autor:
Parhat Ahmet, Kuniyuki Kakushima, A.N. Chandorkar, Kazuo Tsutsui, Nobuyuki Sugii, K. Tachi, Takeo Hattori, Hiroshi Iwai, Miyuki Kouda
Publikováno v:
ECS Transactions. 16:153-160
The electrical properties of CeOx/La2O3 gate stack have been investigated. The leakage current at the EOT around 1.0 nm was suppressed by one order of magnitude by introducing the CeOx/La2O3 stack, compared to that obtained in the La2O3 single layer.
Publikováno v:
IndraStra Global.
In this study, the authors present a multiplier-less, high-speed and low-power pipeline architecture with novel dual Z-scanning technique for lifting-based two-dimensional (2D) discrete wavelet transform (DWT). The proposed architecture is composed o
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 194:311-318
Neutron induced oxide charge trapping and generation of interface states in MOS capacitors with pyrogenic and nitrided pyrogenic field oxides have been studied. In order to assess the damage due to neutrons alone, it is necessary to account for the d
Autor:
V. Ramgopal Rao, A.N. Chandorkar, Harald Gossner, Mayank Shrivastava, Ankur Gupta, Dinesh K. Sharma, Maryam Shojaei Baghini
Publikováno v:
2014 IEEE International Electron Devices Meeting.
This paper explores drain extended MOS (DeMOS) device design guidelines for an area scaled, ESD robust integrated radio frequency power amplifier (RF PA) for advanced system-on-chip applications in 28nm node CMOS. Simultaneous improvement of device-c