Structure and Strain Relaxation in Self-Assisted Grown InAs/GaAs Nanowires

Autor: C. FRIGERI, D. Scarpellini, C. Somaschini, A. Fedorov, S. Bietti, V. Grillo, L. Esposito, M. Salvalaglio, A.Marzegalli, F. Montalenti, E. Bonera, P. G. Medaglia, S. Sanguinetti

Publikováno v: Progress in Applied Surface, Interface and Thin Film Science 2015 (SURFINT-SREN IV), pp. 47–47, Firenze, 23-26 Nov. 2015
info:cnr-pdr/source/autori:C. FRIGERI, D. Scarpellini, C. Somaschini, A. Fedorov, S. Bietti,V. Grillo, L. Esposito, M. Salvalaglio, A.Marzegalli, F. Montalenti, E. Bonera, P. G. Medaglia and S. Sanguinetti/congresso_nome:Progress in Applied Surface, Interface and Thin Film Science 2015 (SURFINT-SREN IV)/congresso_luogo:Firenze/congresso_data:23-26 Nov. 2015/anno:2015/pagina_da:47/pagina_a:47/intervallo_pagine:47–47

At present the most interesting technology for the preparation of advanced opto-electronic devices seems to be the one based on semiconductor nanowires (NWs). Because of their high aspect ratio the NWs are the best candidates for the combination of h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::fa7f2071e49b88f86b2434d714bd190c
https://publications.cnr.it/doc/352352