Zobrazeno 1 - 10
of 56
pro vyhledávání: '"A.M. Samoylov"'
Publikováno v:
Конденсированные среды и межфазные границы. 24:345-355
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c25c5484aba21bafd65fe67c0921674e
https://doi.org/10.17308/kcmf.2022.24/9857
https://doi.org/10.17308/kcmf.2022.24/9857
Autor:
P. Badica, Dmitry I. Pelipenko, V. O. Tsyganova, A.M. Samoylov, M. K. Sharov, Sergey A. Ivkov, B. L. Agapov, E. A. Tutov
Publikováno v:
Inorganic Materials. 56:1020-1026
Nanocrystalline PdO films have been characterized by X-ray diffraction, scanning electron microscopy, and electron probe microanalysis. The results demonstrate that thermal oxidation in an O2 atmosphere causes ~35-nm-thick nanocrystalline Pd films on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c2ecd1bfd29efd514c221fd1a3e05b9
https://doi.org/10.1134/s0020168520100131
https://doi.org/10.1134/s0020168520100131
Publikováno v:
Inorganic Materials. 54:338-348
Lead telluride films have been grown on Si (100) and BaF2 (100) substrates by a modified hot-wall method using a graphite reaction chamber. According to X-ray diffraction, X-ray microanalysis, and scanning electron microscopy characterization results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cae3c2123e71c2fdbeb69c886a3777f
https://doi.org/10.1134/s002016851804012x
https://doi.org/10.1134/s002016851804012x
Autor:
E. K. Belonogov, B. L. Agapov, Sergey A. Ivkov, A.M. Samoylov, Yu. V. Synorov, O. G. Kuzminykh
Publikováno v:
Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases. 20:102-114
Методами растровой электронной микроскопии, локального рентгеноспектрального анализа, рентгенофазового анализа и атомно-силовой микр
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffcea14cacde5bc5b643f628fc925acb
https://doi.org/10.17308/kcmf.2018.20/483
https://doi.org/10.17308/kcmf.2018.20/483
Autor:
A.M. Samoylov, Stanislav V. Ryabtsev, V. M. Ievlev, A.A. Sinelnikov, A.V. Shaposhnik, S.B. Kuschev
Publikováno v:
Sensors and Actuators B: Chemical. 255:1335-1342
Thin and ultrathin films of palladium oxide are set forth as promising materials for oxidizing gas detection. Thin and ultra thin PdO films were prepared by thermal oxidation at dry oxygen of previously formed Pd layers on polished poly-Al2O3, SiO2/S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1e9a2b64048b7045330a059c5f8cf38
https://doi.org/10.1016/j.snb.2017.08.121
https://doi.org/10.1016/j.snb.2017.08.121
Microstructure and electrical properties of palladium oxide thin films for oxidizing gases detection
Publikováno v:
Thin Solid Films. 636:751-759
Palladium oxide thin and ultrathin films have been presented as promising materials for detection of oxidizing gases. PdO films were prepared by thermal oxidation of previously formed Pd layers on different substrates: SiO 2 /Si (100), Si (100), opti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6a5af325495e945e7b2b49f9c1f2ce1
https://doi.org/10.1016/j.tsf.2017.04.009
https://doi.org/10.1016/j.tsf.2017.04.009
Autor:
A.A. Sinelnikov, V. M. Ievlev, S.B. Kuschev, A.M. Samoylov, A.V. Shaposhnik, Stanislav V. Ryabtsev
Publikováno v:
Procedia Engineering. 168:1106-1109
For the first time ultrathin films of palladium oxide are set forth as the perspective materials for detecting oxidizing gases. PdO 1± x thin films were prepared by thermal oxidation of previously formed Pd layers. By RHEED and HRTEM investigations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22d22fe08d09f2282c22bf44e50ed954
https://doi.org/10.1016/j.proeng.2016.11.357
https://doi.org/10.1016/j.proeng.2016.11.357
Publikováno v:
Research & Development in Material Science. 8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1604e9ce0b76c684c710782f48ca38d
https://doi.org/10.31031/rdms.2018.08.000682
https://doi.org/10.31031/rdms.2018.08.000682
Publikováno v:
Journal of Crystal Growth. 351:149-154
The experimental results, which have been received during the examination of the crystal structure and electronic properties of PbTe/Si heterostructures doped with Ga by means of two different techniques, are systematised in this study. The first dop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9319ed364749c6d10c92a31d6ca16f06
https://doi.org/10.1016/j.jcrysgro.2012.01.042
https://doi.org/10.1016/j.jcrysgro.2012.01.042