Zobrazeno 1 - 10
of 54
pro vyhledávání: '"A.M. Goethals"'
Autor:
Roel Gronheid, Rik Jonckheere, Vincent Wiaux, A.M. Goethals, M. Maenhoudt, Geert Vandenberghe, Eric Hendrickx, P. Jansen, Kurt G. Ronse
Publikováno v:
CICC
There are still three major technological lithography options for high volume manufacturing at the 32 nm half pitch node: 193 nm immersion lithography with high index materials, enabling NA > 1.6; 193 nm double patterning and EUV lithography. In this
Autor:
Alan Myers, Rik Jonckheere, Brian Ward, Lawrence S. Melvin, Insung Kim, A.M. Goethals, Gian Francesco Lorusso, Kurt G. Ronse
Publikováno v:
Microelectronic Engineering. 85:738-743
This study investigates various approaches to flare mitigation in EUVL. We evaluate the effectiveness of rule-based correction by defining a design where the critical dimension uniformity is used as a measure of the quality of the correction. We also
Resist surface investigations for reduction of Line-Edge-Roughness in Top Surface Imaging technology
Publikováno v:
Microelectronic Engineering. 46:339-343
The Line-Edge-Roughness (LER) of resist pattern on fine feature has been characterised by means of top/down line width measurements by SEM in Top Surface Imaging (TSI) technology. The resist surface investigation using AFM has provided a correlation
Publikováno v:
Microelectronic Engineering. 27:243-246
The performance of positive and negative tone resists on the critical levels of a 0.35 @mm CMOS process has been evaluated. The use of a darkfield reticle suppresses reflections in lens and resist. Therefore reflection problems are reduced for poly g
Publikováno v:
Microelectronic Engineering. 17:69-73
The lithographic performance of phase shifting and transmission masks are compared. This paper describes the ultimate resolution and process latitudes, that can be obtained by combining a phase shift mask with the DESIRE process at 248 nm. Special em
Publikováno v:
Microelectronic Engineering. 17:99-103
Multiple focus exposures[1], optimization of the partial coherence[2–4] of the stepper and the use of surface imaging[5] have been studied as possible ways to improve depth of focus and exposure latitude for deep-UV lithography at sub-0.5 μm dimen
Publikováno v:
Microelectronic Engineering. 13:37-40
The final lithographic performance of the Desire process is mainly determined by the selectivity of Si incorporation during the silylation step. The influence of the silylation conditions on both the Si contrast and the silylation kinetics have been
Autor:
Hugo Bender, Craig Huffman, Stephan Brus, S. Lok, Liesbeth Witters, Christa Vrancken, Philippe Absil, Sofie Mertens, P. Ong, Bertrand Parvais, V. Truffert, D. Laidler, Serge Biesemans, Nancy Heylen, Anabela Veloso, Malgorzata Jurczak, Nadine Collaert, S. Vanhaelemeersch, C. Baerts, M. Ercken, A.M. Goethals, Steven Demuynck, S. Verhaegen, J. De Backer, G.F. Lorusso, Michal Rakowski, K. Shah, D. Goossens, C. Delvaux, L. Romijn, A. De Keersgieter, Kurt G. Ronse, E. Altamirano, J. Hermans, Hans Meiling, Rita Rooyackers, P. Boelen, O. Richard, J. Versluijs, Andriy Hikavyy, J.-F. de Marneffe, J. Gelatos, A. Van Dijk, A. Noori, B. Hultermans, R. Arghavani, R. Schreutelkamp, Marc Demand, Anne Lauwers, B. Baudemprez, R. Cartuyvels, T. Y. Hoffmann, C. Pigneret, F. Van Roey
Publikováno v:
2008 IEEE International Electron Devices Meeting.
We report on a major advancement in full-field EUV lithography technology. A single patterning approach for contact level by EUVL (NA=0.25) was used for the fabrication of electrically functional 0.186 mum2 6T-SRAMs, with W-filled contacts. Alignment
Publikováno v:
Microelectronic Engineering. 11:515-520
The application of DESIRE, a dry developable optical resist system, in a 0.5 μm NMOS process is described. The investigations are aimed at understanding the major lithography related aspects such as resist resolution and profile, pattern distortion
Publikováno v:
Digest. International Electron Devices Meeting.
In order to cope with the progressive scaling of CMOS, new lithography techniques are introduced for sub-90nm applications. Among them are the introduction of the 157nm wavelength and extreme ultra-violet lithography (EUVL). However, the delay in ava